To enlarge the direct current amplification ratio of a PNP transistor by a method wherein the minimum distance of an N-layer in the PNP transistor of a photothyristor is constructed in the same dimension at the two sections, thereby preventing the concentration of current in a PNP transistor....
So considering the PNP transistor in our sketch, we know that the answer to this first question, which of the regions is the collector region, is either going to be P one or P two. That is, one end of this transistor is the collector and the other is the emitter. But which one is...
Power semiconductor device structure with vertical PNP transistorPower semiconductor device structure formed in a chip (100) of semiconductor material consisting of an N-type substrate (103) and an N-type epitaxial layer (118). The structure comprises a P-type insulation region (106, 121) which ...
PURPOSE: To provide a high-performance longitudinal-type insulating collector PNP transistor structure. ;CONSTITUTION: This structure includes a P<Sup>+</Sup>-region 45 for emitter, N-region 44 for base and P-well region 46 for collector, the P-well region 46 is surrounded with an N-type ...
A structure for logic circuits comprises a current source formed by a PNP transistor and two complementary transistors integrated on the same N- type substrate. A buried plate and P-type walls forms insulating housings. These two complementary transistors are of the vertical type and the PNP trans...
Majority and Minority Carrier Flow of PNP Transistor The field-effect transistor should be used when the environmental conditions (temperature, etc.) vary greatly. 5. When the source metal is connected with the substrate, the source electrode, and the drain electrode can be used interchangeably...
A complementary bipolar transistor device, made of two separate conductive films such as two highly doped polysilicon films of opposite conductivity types. The doped polysilicon film is used for a base of NPN transistor and an emitter of a PNP transistor whereas the other doped polysilicon film is...
Optical semiconductor integrated circuit device and manufacturing method for the sameIn an optical semiconductor integrated circuit device in which a vertical pnp transistor and a photodiode are formed, the preferred embodiments of the present... T Takahashi,T Okoda - US 被引量: 13发表: 2004年 ...
So far, theoretical and experimental efforts have been mainly focused on semiconducting 2D-TMDs with M = Mo and W1–4, due to potential applications in tera- hertz switch5, lasers and LEDs6, ambipolar ionic liquid gated field-effect transistor7, photo detectors1, and so on8. In a...
PURPOSE: To obtain an improved cell structure which is programmable by providing a resistance and an NPN transistor(TR) or PNP lateral transistor in a linear array state together with an open PNP structure. CONSTITUTION: This structure has a 1st P-doped emitter region having a 1st doping level...