DIAGRAM http://onsemi.com (Note: Microdot may be in either location)P2N2 907A AYWW G G P2N2= Device Code 907A= Specific Device A= Assembly Location Y= Year WW= Work Week G= Pb−Free Package P2N2907ARL1TO−92 5000 Units / Bulk P2N2907ARL1G TO−92 (Pb−Free)5000 Units ...
Figure2StructurediagramofaL2PNPtransistor 为了增大横向PNP管的放大系数,减少寄生 的纵向PNP管的影响,就要提高横向空穴注入的 比例,减少纵向空穴注入的比例 [7],可采取如下 措施: 1)在版图上采用圆形发射区可减少发射区面 积与周长之比.因为L2PNP管是横向工作模式, ...
load being small DC motor. The button here is for providing the trigger to thetransistorand 10KΩresistoris for limiting the current to base and to avoid breaching maximum voltage allowed at the base. The circuit is powered from a negative voltage source of -5V DC as shown in diagram. ...
KEC(Korea Electronics) BSS63 59Kb / 1P EPITAXIAL PLANAR PNP TRANSISTOR (GENERAL PURPOSE, SWITCHING) More results 类似说明 - BSS63 制造商 部件名 数据表 功能描述 General Semiconductor MMBT2907A 65Kb / 3P Small Signal Transistor (PNP) STMicroelectronics SOA56 35Kb / 4P SMALL SIGNAL PNP TRANSIS...
2STA1943高功率PNP氧化铅平面双极管数据表说明书 December 2007 Rev 21/9 Features ■ High breakdown voltage V CEO > -230V ■ Complementary to 2STC5200■ Fast-switching speed ■Typical f T = 30 MHz Application ■Audio power amplifier Description This device is a NPN transistor manufactured using ...
预览PDFDownloadHTMLChat AI 部件名NSS35200MR6T1G 功能描述35 V, 5 A,LowVCE(sat)PNPTransistor Download6 Pages Scroll/Zoom 100% 制造商ONSEMI [ON Semiconductor] 网页http://www.onsemi.com 标志 类似零件编号 - NSS35200MR6T1G_13 制造商部件名数据表功能描述 ...
edge termination to enhance switching speeds while maintaining the wide RBSOA.The STX93003 is expressly designed for a new solution to be used in compact fluorescent lamps,where it is coupled with the STX83003, its complementary NPN transistor.® October 2002 ABSOLUTE MAXIMUM RATINGS 1/7 ...
as transistor gates, relays, LEDs etc. Each of the output drivers of the AMIS − 39100 is able to drive up to 275 mA continuously when connected to an inductive load of 300 mH. Even higher driver output currents can be obtained as long as ...
Active−Region Safe Operating Area There are two limitations on the powerhandling ability of a transistor: average junction temperature and second breakdown. Safe operating area curves indicate IC − VCE limits of the transistor that must be observed for reliable operation; i.e., the transistor...
MMBT2907AM3T5G PNP General Purpose Transistor The MMBT2907AM3T5G device is a spin−off of our popular SOT−23 three−leaded device. It is designed for general purpose amplifier applications and is housed in the SOT−723 surface mount package. This device is ideal for low−power ...