2STA1943高功率PNP氧化铅平面双极管数据表说明书 December 2007 Rev 21/9 Features ■ High breakdown voltage V CEO > -230V ■ Complementary to 2STC5200■ Fast-switching speed ■Typical f T = 30 MHz Application ■Audio power amplifier Description This device is a NPN transistor manufactured using ...
edge termination to enhance switching speeds while maintaining the wide RBSOA.The STX93003 is expressly designed for a new solution to be used in compact fluorescent lamps,where it is coupled with the STX83003, its complementary NPN transistor.® October 2002 ABSOLUTE MAXIMUM RATINGS 1/7 ...
Switching circuit A switching circuit has a solid state power switch (9) which is either a PNP or NPN transistor or a VMOS p- or n-channel device. Three individual sensing circuits (2, 3, 4) are set to indicate whether a predetermined operating characteri... MJ Hampshire - US 被引量...
Switch Frequency 350Hz 200Hz Temperature Influence Between -25ºC~70ºC, less than ±10% sensing distance at+20ºC Control Output Transistor output, resistive load Max.100mA Indication Light Operating indicator (Yellow) Working Temperature -25ºC~70º...
When the sensor is active, it will make the active line high. This will turn on the transistor and effectively close the switch. This will allow current to flow into the sensor to theground(hence sinking). The voltage on the NPN output will be pulled down to V-. ...
transistor is used on a computer circuit board to translate the information into binary code, and this procedure is proficient through a plethora of tiny switches flipping On & OFF on the boards. A powerful electric signal twists the switch on, while a lack of a signal makes the switch off...
Switch Frequency 350Hz 200Hz Temperature Influence Between -25ºC~70ºC, less than ±10% sensing distance at+20ºC Control Output Transistor output, resistive load Max.100mA Indication Light Operating indicator (Yellow) Working Temperature -25ºC~70º...
A94 Transistor£¨ PNP £© . FEATURES Power dissipation PCM: 0.625 W Collector current ICM: -0.2 A Collector-base voltage V(BR)CBO -400 V Operating and storage junction temperature range J T stg: -55¡æto +150¡æ ELECTRICAL unless CHARAC
An exemplary quasi-vertical gated NPN-PNP (QVGNP) electrostatic discharge (ESD) protection transistor 100 is illustrated in FIG. 1. In this embodiment of the present invention the device comprises a first buried layer 102 having a first conductivity type (e.g., n or p type) within a semic...