#define Bank1_SRAM3_ADDR ((uint32_t)(0x64000000)) //used NE2 PG9 p = (vu16*)Bank1_SRAM3_ADDR; for (i = 0x00; i < BUFFERLEN; i++) { *p++ = (u16)writebuffer[i]; } p = (vu16*)Bank1_SRAM3_ADDR; for (i = 0x00; i < BUFFERLEN; i++) { readbbuffer[i] = *...
GPIO_InitTypeDef GPIO_Initure;FSMC_NORSRAM_TimingTypeDef FSMC_ReadWriteTim;__HAL_RCC_FSMC_CLK_ENABLE(); //使能 FSMC 时钟 __HAL_RCC_GPIOD_CLK_ENABLE(); //使能 GPIOD 时钟 __HAL_RCC_GPIOE_CLK_ENABLE(); //使能 GPIOE 时钟 __HAL_RCC_GPIOF_CLK_ENABLE(); //使能 GPIOF 时钟 __HAL_R...
void sram_write_word(unsigned short* pbuf, unsigned long addr, size_t size) { while(size--) { *(__IO unsigned short *)(FSMC_BANK1_3 + addr) = *pbuf; addr++; pbuf++; } } // Read word by word void sram_read_word(unsigned short* pbuf, unsigned long addr, size_t size) { ...
GPIO_InitStructure.GPIO_Speed = GPIO_Speed_50MHz;GPIO_InitStructure.GPIO_Mode = GPIO_Mode_AF_PP;...
A dual port static random access memory (SRAM) having dedicated read and write ports provides high speed read operation with reduced leakages. The dual port SRAM includes at least one write word line, at least one read word line, at least one pair of write bit line and read bit line, a...
and out of the memory cells are called " Bit line". The specific word line and bit line can be selected through the input address. The intersection of the word line and bit line is the selected memory cell. Each memory cell is uniquely selected in this way, and then read and write ...
A dual port static random access memory (SRAM) having dedicated read and write ports provides high speed read operation with reduced leakages. The dual port SRAM includes at least one write word line, at least one read word line, at least one pair of write bit line and read bit line, a...
FSMC_NORSRAMTimingInitTypeDef readWriteTiming;GPIO_InitTypeDef GPIO_InitStructure;RCC_AHB1PeriphClock...
Simulation results show that our proposed design achieves obvious higher resilience to SEU and better performance on speed and power dissipation at the expense of an increased area. The proposed cell is a fully SEU immune design with an amount of critical charge at least 7 times more than the ...
Infineon offers scalable expansion RAM memory technologies capable of fast read and write operations, enabling rapid data buffering and providing design flexibility to systems engineers. Random Access Memory (RAM) BU Medical / Healthcare market overview 支持 下面是6个常见问题回答。使用上方搜索栏查看更...