DRAM潜伏期类型分为两种:访问时间(access time)和周期时间(cycle time)。其中访问时间(access time)同前面我们谈论的第二种类型的延迟有关,也就是同读取周期中的延迟时间;而周期时间(cycle time)同我们前面谈论的第一种类型的延迟有关,也就是受到两个读取周期之间的延迟时间影响。当然潜伏期的时间很短,都是用纳秒...
DRAM潜伏期类型分为两种:访问时间(access time )和周期时间(cycle time )。其中 访问时间( access time )同前面我们谈论的第二种类型的延迟有关,也就是同读取周期中的延 迟时间;而周期时间( cycle time )同我们前面谈论的第一种类型的延迟有关,也就是受到两 个读取周期之间的延迟时间影响。当然潜伏期的时间...
1 bit的SRAM单元的核心电路就是一个D触发器。当有power存在的时候，因为D触发器的特性，数据可以保存，...
The invention relates to an SRAM (Static Random Access Memory) reading time self-testing circuit and method. The self-testing circuit comprises an SRAM to be tested, a two-way selector, a delayed scanning circuit, a latch, a comparer, a counter, a first phase inverter and a second phase...
The invention relates to an SRAM (Static Random Access Memory) reading time self-testing circuit and method. The self-testing circuit comprises an SRAM to be tested, a two-way selector, a delayed scanning circuit, a latch, a comparer, a counter, a first phase inverter and a second phase...
Unit tRC Read Cycle Time 10 — 12 — ns tAA Address Access Time — 10 — 12 ns tOHA Output Hold Time 2 — 2 — ns tACS CE Access Time — 10 — 12 ns tDOE OE Access Time — 6 — 6 ns tLZOE(2) OE to Low-Z Output 0 — 0 — ns tHZOE(2) OE to High-Z Output — 5...
FSMC_ReadWriteTim.AddressHoldTime=0x00; //地址保持时间(ADDHLD)模式A未用到 FSMC_ReadWriteTim.DataSetupTime=0x08; //数据保存时间为8个HCLK =6*1=6ns FSMC_ReadWriteTim.BusTurnAroundDuration=0X00; FSMC_ReadWriteTim.AccessMode=FSMC_ACCESS_MODE_A;//模式A ...
p.FSMC_AddressSetupTime = 0; /*ADDSET 地址建立时间*/ p.FSMC_AddressHoldTime = 0; /*ADD...
SRAM（Static Random Access Memory）是一种静态随机存取存储器，它是一种主要用于 CPU 内部的高速缓存（...
1 Document Title 128K x8 bit Super Low Power and Low Voltage Full CMOS Static RAM Revision History Revision No. History Date Remark 0.0-.Initial Draft May 09 2003Preliminary 0.1-.Add Pb-free part number Feb.132004 0.2 -.Add 45ns part specification Mar.20 2009 -.I SB1(Typ.) changed...