PURPOSE:To reduce in size a memory cell, to compose a semiconductor chip having a large capacity and a small area, and to obtain an SRAM memory cell structure having a strengthened structure even against a soft error by symmetrically splitting an SRAM memory cell, forming them by a multilayer...
l structure of SRAM Memory cell structure of SRAMMemory cell structure of SRAM一种静态随机存取记忆体的记忆胞的结构,SRAM元件,其包括位于基板的深N井区中的SRAM记忆胞. A static random access memory cell structure of the memory, SRAM components, which includes a deep N-well region of the substrate...
In the SRAM memory cell structure of the structure of the SRAM memory cell structure in which each of the driver transistors 8 and 9 is disposed substantially parallel to each other, the contact portion of the gate electrode of the driver transistor is also referred to as the word line An ...
This paper reports a novel low-voltage two-port 6T SRAM memory cell structure with single-bit-line simultaneous read-and-write access capability using a partially-depleted SOI CMOS dynamic-threshold technique. With an innovative approach connecting the body terminal of an NMOS device in the latch...
SRAM cell structure and manufacturing method thereofX-ray microdiffractionthin filmsstrain/stressA static random access memory (SRAM) cell structure at least comprising a substrate, a transistor, an upper electrode and a capacitor dielectric layer. A device isolation structure is set up in the ...
在bit-oriented SRAM中，每个地址访存一个bit；而在word-oriented memory中，每个地址可以访存n bits构成...
(57)< Abstract > The bistable field-effect transistor BIMOS which possesses the gate voltage characteristic curved line which possesses the channel territory where 3 transistors - memory cell floating was done geipurito is completely and, displays hysteresis is included. As for that gate G, for wr...
- Memory cell size reduced to 1/3 -Hitachi, Ltd. (TSE:6501, NYSE:HIT) , in cooperation with Renesas Technology Corp. (Renesas Technology; Chairman & CEO: Dr. NAGASAWA Koichi) have developed a new three-dimensional (3D) structure SRAM (Static Random Access Memory) cell, and successfully ...
Has been developed a compact memory cell structure for static random access memory cell. The cell has two transistors having gates (30a, 30b) which are substantially parallel with respect to each other. A first interconnect (45) connects the gate (30b) of a first transistor to an electrode ...
A static random access memory (SRAM) cell structure at least comprising a substrate, a transistor, an upper electrode and a capacitor dielectric layer. A device isolation structure is set up in the substrate to define an active region. The active region has an opening. The transistor is set ...