l structure of SRAM Memory cell structure of SRAMMemory cell structure of SRAM一种静态随机存取记忆体的记忆胞的结构,SRAM元件,其包括位于基板的深N井区中的SRAM记忆胞. A static random access memory cell structure of the memory, SRAM components, which includes a deep N-well region of the substrate...
PURPOSE:To reduce in size a memory cell, to compose a semiconductor chip having a large capacity and a small area, and to obtain an SRAM memory cell structure having a strengthened structure even against a soft error by symmetrically splitting an SRAM memory cell, forming them by a multilayer...
摘要: PURPOSE: To provide SRAM memory cell structure capable of improving the soft error resisting properties of SRAMs remarkably, and capable of forming them easily in respect of processes, without increasing the cell size.收藏 引用 批量引用 报错 分享 ...
在bit-oriented SRAM中，每个地址访存一个bit；而在word-oriented memory中，每个地址可以访存n bits构成...
SRAM cell structure and manufacturing method thereofX-ray microdiffractionthin filmsstrain/stressA static random access memory (SRAM) cell structure at least comprising a substrate, a transistor, an upper electrode and a capacitor dielectric layer. A device isolation structure is set up in the ...
- Memory cell size reduced to 1/3 -Hitachi, Ltd. (TSE:6501, NYSE:HIT) , in cooperation with Renesas Technology Corp. (Renesas Technology; Chairman & CEO: Dr. NAGASAWA Koichi) have developed a new three-dimensional (3D) structure SRAM (Static Random Access Memory) cell, and successfully ...
(57)< Abstract > The bistable field-effect transistor BIMOS which possesses the gate voltage characteristic curved line which possesses the channel territory where 3 transistors - memory cell floating was done geipurito is completely and, displays hysteresis is included. As for that gate G, for wr...
A static random access memory (SRAM) cell structure at least comprising a substrate, a transistor, an upper electrode and a capacitor dielectric layer. A device isolation structure is set up in the substrate to define an active region. The active region has an opening. The transistor is set ...
Has been developed a compact memory cell structure for static random access memory cell. The cell has two transistors having gates (30a, 30b) which are substantially parallel with respect to each other. A first interconnect (45) connects the gate (30b) of a first transistor to an electrode ...
[11] GHANATGHESTANI M M,PEDRAM H,GHAVAMI B.Design of a low-Standby power and high-Speed ternary memory cell based on carbon nanotube field-effect transistor[J].Journal of Computational & Theoretical Nanoscience,2015,12(12):5457-5462. ...