Sr2SiO4光致发光光激励发光光存储通过还原气氛下的高温固相反应制备了Sr_(1.994-x)SiO_(4):0.006Eu^(2+),xDy^(3+)(x=0.001~0.006)荧光粉.利用X射线衍射仪(XRD)和荧光分光光度计分析了Sr_(1.994-x)SiO_(4):0.006Eu^(2+),xDy^(3+)荧光粉的晶体结构和发光性能,通过光致发光(PL)谱和光激励发光(...
正交设计法优化黄色LED发光材料Sr2SiO4：Eu 2+的制备工艺
Nanophosphors of (Sr0.98-xMgxEu0.02)2SiO4 (x=0, 0.18, 0.38, 0.58 and 0.78) were prepared through low temperature solution combustion method and their luminescence properties were studied. The emission peak for Eu2+ doped Sr2SiO4 nanophosphor is observed at ~490 nm and ~553 nm corresponding...
One-dimensional Sr2SiO4: Eu2+ nanorods were obtained, which shows intense blue–green emission under the excitation of near ultraviolet (n-UV) light (275–425 nm). It indicates that Sr2SiO4: Eu2+ phosphors are promising blue-green candidates for the n-UV white LEDs....
Eu 荧光粉,并研究了材料的发光特性。X射线衍射 结果显示,Sr2SiO4·SrC12:Eu 材料是由SrC12: Eu抖和Sr2SiO:Eu抖构成的复合化合物。以320nm 紫外光作为激发源,测得材料的发射光谱呈宽谱特征, 覆盖350～60Onto。在0.5 ～2 范围增大Eu抖掺 杂量时,位于蓝色光区域的发射峰位置没有变化,为 ...
White light emitting Sr2SiO4:Eu2+ nanoparticles were prepared using reverse micellar route using Tergitol as a surfactant. The systems were characterised by X-ray diffraction, scanning electron microscopy (SEM), photoluminescence, thermoluminescence (TL), and electron paramagnetic resonance (EPR) ...
This work has researched the sensitization effect of co-doping ions (Ce 3+ ) to Sr 2 SiO 4 :Eu 2+ phosphors. The results showed that the luminescence intensity of the samples improved when doped with Ce 3+ ions, and reached the maximum when the concentration was 0.5mol%. Furthermore, ...
A novel synthesis of a Sr2SiO4:Eu2+ green phosphor by using an atmospheric-pressure nonthermal plasma discharge was investigated. The experiments were carried out at a relatively low temperature of 800 °C as compared with the conventional thermal method which is performed at temperatures above 1...
Yellow Emission from Low Coordination Site of Sr2SiO4:Eu2+, Ce3+: Influence of Lanthanide Dopants on the Electron Density and Crystallinity in Crystal Site Engineering Approachcrystal site engineering approachesdensity functional calculationsmicrostructures...
GaN-Based white-light-emitting diodes fabricated with a mixture of Ba3MgSi2O8 : Eu2+ and Sr2SiO4 : Eu2+ phosphors The photoluminescence (PL) spectra of BaMgSiO:Eushow one peak at 442 nm and two unresolved peaks at 505 nm. The 442 nm peak is attributed to the 4f鈫 5d tra... JS...