Spin-orbit interactionThe spin–orbit potential consists of two parts, i) The Larmor part and ii) Thomas precession."An example of how the atomic spin–orbit interaction influences the band stru…
而后者一般指,比如spin hall effect(SHE)或者Rashba effect,又或者Inverse spin galvanic effect(ISGE)所造成的界面处的nonequilibrium spin density。而对于反铁磁来说,如何调控Neel order成为一个难题。因为对于AFMs,一般需要找出一种Neel-order-spin-torque(NOST)来调控不同sublattices上的相反自旋,才能够使得实现...
This spin-orbit torque magnetoresistance effect element includes: a first ferromagnetic layer; a second ferromagnetic layer; a non-magnetic layer positioned between the first ferromagnetic layer and the second ferromagnetic layer; and a spin-orbit torque wiring on which the first ferromagnetic layer is...
The spin-orbit torque (SOT) effective fields, namely field-like and damping-like terms, depend on the thicknesses of heavy metal (HM) and ferromagnetic metal (FM) layers, in a stack comprising of HM/FM/HM or oxide. In this work, we report on the dependence of the SOT effective fields...
How to cite this article:Chen, L.et al. Robust spin-orbit torque and spin-galvanic effect at the Fe/GaAs (001) interface at room temperature.Nat. Commun.7,13802 doi: 10.1038/ncomms13802 (2016). Publisher's note:Springer Nature remains neutral with regard to jurisdictional claims in publish...
The engineering of spin–orbit torques, based mostly on the spin Hall effect, is being intensely pursued. Here, we report that the oxidation of spin–orbit-torque devices triggers a new mechanism of spin–orbit torque, which is about two times stronger than that based on the spin Hall ...
机译:界面自旋轨道耦合产生的自旋轨道转矩 7. Intrinsic Spin-Orbit Torque Arising from the Berry Curvature in a Metallic-Magnet/Cu-Oxide Interface [O] . Tenghua Gao, Alireza Qaiumzadeh, Hongyu An, 2018 机译:在金属磁体/ Cu-氧化物界面中由浆果曲率产生的内在自旋轨道扭矩 AI...
SOT-MRAM exhibits great potential to compete with the last-level cache SRAM2due to its sub-ns switching speed, sub-1V switching voltage3, and high endurance, which is achieved by a three-terminal bit cell to separate the read and write paths in contrast to spin-transfer-torque (STT) MRAM...
We investigated the self-torque effect on CoTb single-layer devices and the HM/CoTb bilayer devices. The self-torque was observed in single CoTb layer to switch its own magnetization when the thickness is large enough. For HM/CoTb devices, the interplay of self-torque and the spin orbit torq...
The effect of the Rashba spin-orbit coupling on the ground-state energy of polaron in a parabolic quantum dot 热度: nmat.2018-A conductive topological insulator with large spin Hall effect for ultralow power spin-orbit torque switching