当外加电流密度达到某个临界值时,STT产生的damping-like torque就会克服damping从而使磁矩发生翻转。 根据上述STT机制设计的STT-MRAM如下图所示: 平面式iSTT-MRAM存储单元结构图 垂直式pSTT-MRAM存储单元结构图 2、Spin Orbit Torque (SOT):自旋轨道转矩 由于STT-MRAM还存在一些弊端,例如调控磁矩翻转的临界电流密度仍...
5.5. Spin-orbit torque-magnetic random access memory 5.6. Spin-orbit torque-induced motion of spin texture: Racetrack memory 5.6.1. Domain wall motion 5.6.2. Motion of skyrmions 5.7. Spin-orbit torque-logic devices 5.8. Spin-orbit torque oscillators 5.9. Spin-orbit torque and neuromorphic compu...
Here we report the observation of spin-orbit torque switching in bilayers consisting of a semimetallic film of 1T'-MoTe2 adjacent to permalloy. Deterministic switching is achieved without external magnetic fields at room temperature, and the switching occurs with currents one order of magnitude ...
Suzuki, "Spin-orbit torque in a bulk perpendicular magnetic anisotropy Pd/FePd/MgO system.," Sci. Rep., vol. 4, p. 6548, 2014.Lee, H.-R. et al. Spin-orbit torque in a bulk perpendicular magnetic anisotropy Pd/FePd/MgO system. Scientific Reports 4, 6548 (2014)....
which does not require a magnetic polarization layer. The physical mechanism underlying the magnetization switching by spin-orbit torque consists of at least two components, the spin Hall effect and the Rashba effect. The damping-like torque generated by spin currents from the spin Hall effect was...
Memory is ubiquitous and fundamental to all computing systems, yet incumbent technologies are still dominant, mostly unchanged for decades but facing increasingly higher hurdles placed by Moore’s Law. SOT’s unique and revolutionary attributes combine performance and reliability requirements for both RAM...
Spin transfer torques allow the electrical manipulation of magnetization at room temperature, which is desirable in spintronic devices such as spin transfer torque memories. When combined with spin–orbit coupling, they give rise to spin–orbit torques, which are a more powerful tool for controlling ...
To achieve the memristive function, a domain wall (DW) is driven back and forth in a continuous manner in the CoFeB layer by applying in‐plane positive or negative current pulses along the Ta layer, utilizing the spin–orbit torque (SOT) that the current exerts on the CoFeB magnetization....
Robust field-free switching using large unconventional spin-orbit torque in an all-van der Waals heterostructure The emerging all-van der Waals (vdW) magnetic heterostructure provides a new platform to control the magnetization by the electric field beyond the traditi... Y Zhang,X Ren,R Liu,.....
Spin-orbit torque-induced switching of an elliptical nanomagnet with an in-plane easy axis allows sub-ns and field-free operation. Since its properties crucially depend on the design of the nanomagnet such as the easy-axis direction, it is of high importance to systematically elucidate the depe...