5. Performance of spin–orbit torque 5.1. Modulation of spin–orbit torque 5.1.1. Interfacial modulation 5.1.2. Modulation by strain 5.1.3. Modulation by electric field 5.7. Spin-orbit torque-logic devices 5.8. Spin-orbit torque oscillators 5.9. Spin-orbit torque and neuromorphic computing 6. ...
当外加电流密度达到某个临界值时,STT产生的damping-like torque就会克服damping从而使磁矩发生翻转。 根据上述STT机制设计的STT-MRAM如下图所示: 平面式iSTT-MRAM存储单元结构图 垂直式pSTT-MRAM存储单元结构图 2、Spin Orbit Torque(SOT):自旋轨道转矩 由于STT-MRAM还存在一些弊端,例如调控磁矩翻转的临界电流密度仍比...
The bottom-pinned spin-orbit torque (SOT) MRAM devices are fabricated to form high quality interfaces between layers including the spin-orbit torque (SOT) layer and the free layer of the magnetic tunnel junction (MTJ) by forming those layers under vacuum, without breaking vacuum in between ...
研究人员表示,MRAM 芯片应用于 in-memory computing(内存内计算)电脑,十分适合进行神经网络运算等,因为这种计算架构与大脑神经元网络较为相似。 MRAM 器件在操作速度、耐用性和量产等方面具有优势,但其较低的电阻使 MRAM 存储器在传统的存内计算架构中无法达到低功耗要求。在本篇论文中,三星电子的研究人员构建了一种...
Spin–orbit torque (SOT)-based MTJs have been proposed to overcome this issue while improving the switching efficiency15. In SOTs, a charge current (ISOT) greater than the critical charge current (ISOT,crit) flows through a heavy metal (HM) and the switching is accomplished by SOT through ...
Thermal-magnetic noise measurement of spin–torque effects on ferromagnetic resonance in MgO-based magnetic tunnel junctions. Appl. Phys. Lett. 95, 082506 (2009). Google Scholar Cubukcu, M. et al. Ultra-fast perpendicular spin–orbit torque MRAM. IEEE Trans. Magn. 54, 9300204 (2018). ...
自旋轨道力矩(spin–orbit torque, SOT)提出了一种利用电流诱导的自旋流来控制MTJ自由层磁化翻转的手段,通过将磁随机存储器件中读、写通道的分离,极大程度上优化了器件性能。由于非易失、高速度、小尺寸、低功耗等特性,以SOT为基础的MRAM不仅可以超越摩尔定律,也有希望通过新架构突破“存储墙”的限制,成为了最有发展...
“Spin-transfer Torque MRAM technology is an ideal candidate for radiation hard FPGA devices due to its persistence and inherent radiation immunity, said Sanjeev Aggarwal, President & CEO of Everspin. “We are excited to work with the other partners on this program to develop reconfigurable, FPGA...
Everspin’s Spin-transfer Torque (STT) MRAM technology uses the spin-transfer torque property, which is the manipulation of the spin of electrons with a polarizing current, to establish the desired magnetic state of a magnetic tunnel junction (MTJ). STT-
In-Memory Computing Architecture for a Convolutional Neural Network Based on Spin Orbit Torque MRAM. Electronics. 2022; 11(8):1245. https://doi.org/10.3390/electronics11081245 Chicago/Turabian Style Huang, Jun-Ying, Jing-Lin Syu, Yao-Tung Tsou, Sy-Yen Kuo, and Ching-Ray Chang. 2022. "...