Drain-Source之间还可能发生穿通击穿现象,这主要是由于在Drain加反偏电压后,使得Drain/Bulk的PN结耗尽区延展,当耗尽区碰到Source的时候,源漏之间就会形成通路,这种情况被称为穿通(punch through)。为了防止穿通,可以通过调整掺杂浓度、PolyCD、Spacer宽度或LDD...
At least one drain-side surfaces of a field effect transistor (FET) structure, which can be a structure for a planar FET or a fin FET, is structurally damaged by an angled ion implantation of inert or electrically active dopants, while at least one source-side surface of the transistor is...
1，MOSFET 不管是P还是N，只要符合Vgs电压，Drain-》Source还是Source--》Drain都可以 2，MOSFET是打开导电沟，换言之就是把一个阀门打开，不管那一头接入都是一样。但是就是要确保Vgs电压，N，Vgs是正电压，P是负电压 2，所以这样一来很多PMOSFET会做开关电源切换，让人看起来就是Source到Drain，因...
We have studied the effect of deviations from doping uniformity in source and drain on the performance of sub-20 nm silicon double-gate MOSFET devices. The study is motivated by recent direct observation of such inhomogeneities in small MOSFET devices. The model assumes a continuous charge distribu...
If the MOSFET is a symmetrical device, i.e the current can flow either from the drain to the source, or vice versa, depending on wheather you apply the...
A pair of shallow trenches are defined on either side of the gate stack, and an intrinsic silicon material is disposed within the pair of shallow trenches up to a top surface of the gate stack. The MOSFET structure further includes source and drain implanted impurities that are defined in an...
Gate-Field Engineering and Source / Drain Diffusion Engineering for High-Performance Si Wire GAA MOSFET and Low-Power Strategy in Gate-field engineering and source/drain diffusion engineering for high-performance Si wire GAA MOSFET and low-power strategy in sub-30-nm-channel regime. ......
有一个gate和drain连接在一起的mosfet,它的参数是vt和k。它的drain-to-source电压和drain电流分别用vr和ir表示(20分)a. 写出该m
Schottky barrier engineering for contact resistance reduction in nanoscale CMOS transistors (for e.g., nickel-silicide NiSi) and heavily-doped source and drain region in a MOSFET is dependent exponentially on the Schottky barrier height at ... INGI 被引量: 0发表: 2010年 Contact resistance reduct...
对于MOSFET而言,第二把交椅是阈值电压(Gate-source threshold voltage,VGS(th))。 这个排名或许会有争议,为何不是电流(DC drain current,ID)或导通电阻(Drain-source on-state resistance,RDS(on))? 很遗憾,笔者不是销售视角(电压/电流,电压/导通电阻朗朗上口),而更多的是从芯片设计角度来看数据表;所以暂且搁置...