This ferroelectric thin film-forming sol-gel solution contains: a PZT-based compound; a high-molecular compound used to adjust the viscosity containing polyvinyl pyrrolidone; and an organic dopant containing N-methyl pyrrolidone, in which the amount of the PZT-based compound is greater than or ...
Thin film transistors (TFTs) fabricated by solution processing of sol-gel oxide semiconductor precursors in the group In-Ga-Zn are described. The TFT mobility varies over a wide range depending on the precursor materials, the composition, and the processing variables, with the highest mobility bei...
网络释义 1. 法 ...良陶瓷” 的概念,并称该法为化学合成法或 SSG法(Solution-Sol-Gel) 。 wenku.baidu.com|基于6个网页 2. 凝胶法 ① 用传统的溶胶——凝胶法(Solution-sol-gel)。这是具有60多年历史的成熟方法。 www.bokee.net|基于2个网页...
Sol-Gel法 ●用Sol-Gel法制备ZnO膜 【例一】 所用的原材料为分析纯的醋酸锌Zn(CH3COO)2·2H2O(纯度≥99.0%),溶剂为异丙醇、去离子水和二乙醇胺NH(CH2CH2OH)2。非适量的Zn(CH3COO)2·2H2O在异丙醇中加热溶解,然后加入NH(CH2CH2OH)2,其比例为x[Zn(CH3COO)2·2H2O]∶x[NH(CH2CH2OH)...
The composition includes a sol-gel solution filled with a conductive powder. The coating may be conductive or resistive depending on the application. A process is provided for applying such a coating by mixing a sol-gel solution with up to about 90% by weight of the solution of a conductive...
The sol-gel solution includes sodium aluminoborosilicate having about 75-90 mol % SiO. sub.2, about 5-20 mol % B.sub.2 O.sub.3, about 1-10 mol % Na. sub.2 O and about 0-5 mol % Al.sub.2 O.sub.3.doi:US5989372 ALeslie A. Momoda...
sol-gel法 ●用sol-gel法制备zno膜 【例一】 所用的原材料为分析纯的醋酸锌zn(ch3coo)2·2h2o(...
•TheSol-Gelprocessallowstosynthesizeceramicmaterialsofhighpurityandhomogeneitybyaprocessoccursinliquidsolutionoforganometallicprecursors(TMOS,TEOS,Zr(IV)-Propoxide,Ti(IV)Butoxide,etc.),which,bymeansofhydrolysisandcondensationreactions,leadtotheformationofanewphase(SOL).M-O-R+H2OM-OH+R-OH(hydrolysis)M-...
solutionturnedtoyellowishsol.Then,heatedat800Candstirredconstantly,thesoltransformedintotransparentstickygel...
Lead magnesium niobate (PMN) thin films were prepared by a solution sol-gel (SSG) technique. X-ray diffraction analysis indicated that the perovskite phase of PMN formed at a temperature as low as 775掳C. A highly oriented film along (111) direction was obtained on silicon substrate. The ...