Si(100) substrate by Sol-Gel method. The technologic parameters such as preparation of precursor solution, control of thickness and homogeneity, heat-treatment were optimized. The microstructure and electric properties of these thin films were investigated, and the results indicate that not only ...
Sol-Gel PZT, a turn-key solution from Mitsubishi Materials Corp. and SCREEN Semiconductor Solutions Co.,Ltd.yole développement
Structure ChangesPreviously thermally annealed at low temperature as 450脗掳C PbZr 0.58 Ti 0.42 O 3 (PZT) sol-gel films on Pt(111)/Ti/SiO 2 /Si substrates were treated by CO 2 laser radiation and their structure have been studied by X-ray diffraction. Basing on experimental data on ...
Sol溶液中的分 散和稳定作用。确定了分散剂最佳使用条件为聚乙二醇用量o.4wt%,pH=3-..4。j-- PZT铁电厚膜采用新型S01.Gel法制备。研究了制备0.3型PZT厚膜材料的 新型S01.Gel技术和其工艺条件对PZT厚膜的微观结构及电性能的影响,并探讨 了PzT厚膜生长与厚膜致密性机理。荆用该技术成功地制备出致密性好,晶粒尺...
制备的溶胶室温放置了5天状态视乎没有发生任何变化，1、应该如何处理使其凝胶 2、溶胶的凝胶过程中会有...
内容提示: 16快速热处理中退火温度对Sol-gel法制备PZT铁电薄膜性能的影响胡绍璐1,2, 赵海臣1, 李林华1, 任丽1,2, 邓朝勇1,2(1.贵州大学电子信息学; 2 贵州省电子功能复合材料特色重点实验室, 贵州 贵阳 550025)摘要: 利用 Sol-Gel 法在 Pt/TiO2/SiO2/Si 基底上用快速热处理 (Rapid Thermal Processing,...
用Sol_Gel法制备PZT铁电陶瓷及薄膜_图文 上传人:7*** IP属地:湖北上传时间:2022-01-15格式:DOC页数:1大小:61KB积分:18版权申诉 全文预览已结束 下载本文档 版权说明:本文档由用户提供并上传,收益归属内容提供方,若内容存在侵权,请进行举报或认领...
请教各位有经验的虫友大大，最近在做sol-gel制备PZT的实验，在退火步骤上遇到问题。将前驱液旋涂在硅片...
Sol-gel preparation of thick PZN-PZT film using a diol-based solution containing polyvinylpyrrolidone for piezoelectric applications. Choi, Jong-Jin,Park, Gun-Tae,Lee, Sung-Mi,Kim, Hyoun-Ee. Journal of the American Ceramic Society . 2005
Rapid thermal processing (RTP) techniques were used to produce the films by firing the sol-gel coatings in the temperature range 600-900 掳C for dwell times of 1-900 seconds. A single deposition of the precursor sol resulted in films having a thickness of 0.4 m. Good electrical properties ...