掺杂本文基于MS 2018软件,采用密度泛函第一性原理方法,利用平面波超软赝势计算了β-Ga2O3超胞掺杂不同含量Sn,Cu元素后的能带结构,态密度和分波态密度变化特性.研究发现,在本征半导体β-Ga2O3超胞中进行少量的Sn,Cu元素掺杂均可减小β-Ga2O3的禁带宽度,增强其导电特性.少量Sn掺杂后,β-Ga2O3的费米能级更接近...
研究发现,Cu,Sn掺杂后,β-Ga2O3半导体薄膜光电器件的电导率,IV特性和光电特性都有一定的改善,而Sn掺杂的Sn/β-Ga2O3薄膜的电导率增加幅度最大.其中,Sn/β-Ga2O3器件呈现了最佳IV特性,说明Sn掺杂比Cu掺杂的效果更好.同时,掺杂并进行退火处理更可使薄膜的电导率呈现数量级的提升.制备的不同二维沟道型器件都...
Gallium oxide (Ga2O3) has received increasing interest during the past decade owing to its intriguing physical properties, such as its excellent transparency [1], wide bandgap [2], high radiation resistance [3], high saturation electron velocity [4], and the ability for its large-scale single...