以SiO2保护壳为介导的热解法来制备Fe/N/C催化剂,相关文章“SiO2-protected shell mediated templating synthesis of Fe-N-doped carbon nanofibers and their enhanced oxygen reduction reaction performance”在Energy & Environmental Science在线发表。
以SiO2保护壳为介导的热解法来制备Fe/N/C催化剂,相关文章“SiO2-protected shell mediated templating synthesis of Fe-N-doped carbon nanofibers and their enhanced oxygen reduction reaction performance”在Energy & Environmental Science在线发表。
这个计算器将确定反应的限制试剂。🛠️ 计算极限试剂 ➜ Instructions To calculate the limiting reagent, enter an equation of a chemical reaction and press the Start button. The reactants and products, along with their coefficients will appear above. Enter any known value for each react...
Diffusion Reaction of Oxygen in HfO2/SiO2/Si Stacks We study the oxidation mechanism of silicon in the presence of a thin HfO2 layer. We performed a set of annealing in 18O2 atmosphere on HfO2/SiO2/Si stacks... S.,Ferrari,M.,... - 《Journal of Physical Chemistry B》 被引量: 33发表...
张德懿等[3]将微硅粉经酸 浸、HF 酸溶解、水解等步骤制备白炭黑,由于采用HF , 微硅粉是硅铁合金和工业硅生产过程中,在矿热电 易腐蚀设备. 本研究以微硅粉为硅源,经碱液溶解制备 炉内产生的挥发性 SiO 和 Si 气体与空气迅速氧化并冷 硅酸钠溶液,再经碳化合成白炭黑(纳米 SiO2) 的工艺路 凝而成的工业粉尘...
Reaction of thin metal films with SiO2 substrates. Solid-State Electron. 1978, 21, 667-675. [CrossRef]R. Pretorius,J. M. Harris§,and M-A. Nicolet.Reaction of thin metal films with SiO substrates. Solid State Electronics . 1978
Since the plasma is confined near a quartz plate, HF molecules generated from the reaction of H atoms with F atoms do not undergo dissociation in the diffusive region. Thus high-speed pumping of HF is considered to suppress Si etching and in turn, to allow highiy selective SiOetching. 展开...
The elementary reaction paths for the reactions of HF and HCl with Si O bonds of the models, Si(OH) 4 and (HO) 3 SiOSi(OH) 3 , are calculated by the Hartree–Fock method. The local transition-state structures are nearly plane quadrangles with neighboring pentacoordinated silicon and tri...
10 μm 图 2 氯化焙烧后石英颗粒表面形貌 Fig.2 Surface morphology of quartz sand after chloridizing calcination 3 真空焙烧-酸浸纯化技术 钟乐乐 [1] 等利用真空焙烧设备在高真空 (0.01 Pa),高温(约 1500℃)条件下焙烧石英 砂(3 h),再利用混合酸体系(HCl-HF-HNO3) 浸出石英中的杂质 , 石英中 Al,...
Plasma chemical behaviour of reactants and reaction products during inductively coupled CF4 plasma etching of SiO2 A two-dimensional fluid model has been developed to study plasma chemical behaviour of etch products as well as reactants during inductively coupled CFplas... H Fukumoto,I Fujikake,Y...