Ni-Si mixing: A new model for low temperature silicide formationdoi:10.1016/0167-2584(85)91073-4E.J. Van LoenenJ.F. Van Der VeenF.K. LeGoues
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还行 清晰:已完结 类型:生活偶像明星 主演:朴海镇朴成雄金敏贞蔡贞安延政勋千虎珍张铉诚太仁镐 导演:李昌民 国家/地区:韩国 时长: 语言/字幕:韩语 年代:2017 更新时间:2024-06-22 11:23:07 影视/评论:当前有0条评论, 详细介绍:该剧以特殊警卫要员金蔎雨和topstar汝云光的兄弟…详情 ...
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Annealing of irradiated samples produces very similar interdiffusion and phase formation patterns above 400°C as in the non-irradiated Co/Si bilayers: the phase evolution follows the sequence Co 2 Si→CoSi→CoSi 2 . 展开 关键词: Ion beam mixing Thermal mixing Silicides TEM, RBS, XRD ...
The mixing of Bloch states G( k, k′) has been evaluated for the first time along the Δ 1 conduction band. Results give evidence for G( k, k′) of a variation of about 20 percent with respect to the square norm G k, k′) for k states at Γ 15 and at X 1, while negligible...
(2) For several noble-gas ions, the effects of ion charge and low-energy Ar+ pre-implantation into the Si wafers were studied. While the interface mixing rate does not depend on the ion charge, pre-amorphization of the Si wafer enhances the mixing rate by a factor 2. (3) Finally, ...
The reactions between bilayered Ni/Pt films and Si (100) substrates induced by thermal annealing and ion mixing were investigated. Thermal annealing of Si/
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Mixing at the Ni3N/Si interface occurs via a combination of diffusion and reaction controlled transport processes and the interface broadening varies in second order with the ion fluence. At higher ion fluences, the formation of NiSi2 and Si3N4 phases at the interface was found. 展开 ...