2SC2879 SILICON NPN EPITAXIAL PLANAR TYPE 2~30MHz SSB LINEAR POWER AMPLIFIER APPLICATIONS (LOW SUPPLY VOLTAGE USE) No reviews yet Shenzhen Hengtai Yi Technology Co., Ltd.2 yrsCN Previous slideNext slide Previous slideNext slideOther recommendations for your business ULN2002AN ULN2002A DIP16 ...
MA111-TXFeatures • Small S-mini type package, allowing high-density mounting • Short reverse recovery time trr • Small terminal capacitance, Ct • High breakdown voltage (VR = 80 V)
Silicon Epitaxial Planar Switching Diode 1N4148 1N4148 Applications : - High-speed switching This diode is also available in MiniMELF case with the type designation LL4148 Product Description Company Profile Dongguan Merry Electronics Co., Ltd. was established in 2013 as a professional suppli...
KDS184 Silicon Epitaxial Planar Diode 产品说明书 ULTRA HIGH SPEED SWITCHING APPLICATION.FEATURES Small Package : SOT-23.Low Forward Voltag : V F =0.9V(Typ.).Fast Reverse Recovery Time : t rr =1.6ns(Typ.). Small Total Capacitance : C T =0.9pF(Typ.).MAXIMUM RATING (Ta=25 )ELECTR...
D. Kahng and M. P. Lepselter.Planar epitaxial silicon Schottky barrier diodes. The Bell System Technical Journal . 1965Planar epitaxial silicon Schottky barrier diodes. D. Kahng and M. P. Lepselter. The Bell System Technical Journal . 1965...
Transistor Application international standard Type power transistor Series Transistor Features international standard Packaging and delivery Selling Units: Single item Single package size: 9X7X3 cm Single gross weight: 0.015 kg Show more Lead time
1N4148.1N4448VishayTelefunkenRev.2,01-Apr-991(4).vishay.de•FaxBack+1-408-970-5600DocumentNumber85521SiliconEpitaxialPlanarDiodesFeaturesElectricallyequivalentdiodes:1N4148–1N9141N4448–1N914BApplicationsExtremefastswitches949367AbsoluteMaximumRatingsTj=25CParameterTestConditionsTypeSymbolValueUnitRepetitivepeak...
●Features ■Extremely small surface mounting type ■High reliability。中文标题(翻译):RB521S-30-MS硅外延平面肖特基势垒二极
Cmos-based planar type silicon avalanche photo diode using silicon epitaxial layer and method of manufacturing the sameCmos-based planar type silicon avalanche photo diode using silicon epitaxial layer and method of manufacturing the sameA complementary metal-oxide semiconductor (CMOS)-based planar type ...
planar ones is clearly displayed. Line-scan profile indicates these BP nanosheets during the transition states are with thickness of ~ 5 nm.eOptical image of a representative BP film grown on Si/SiO2substrate with a lateral size over 200 μm.fXRD spectra of the synthesized BP film. A...