Silicon Epitaxial Planar Switching Diode 1N4148 1N4148 Applications : - High-speed switching This diode is also available in MiniMELF case with the type designation LL4148 Product Description Company Profile Dongguan Merry Electronics Co., Ltd. was established in 2013 as a professional supplier of semi...
KDS226 Silicon Epitaxial Planar Diode 产品说明书 ULTRA HIGH SPEED SWITCHING APPLICATION. FEATURES Small Package : SOT-23.Low Forward Voltag : V F =0.9V(Typ.).Fast Reverse Recovery Time : t rr =1.6ns(Typ.). Small Total Capacitance : C T =0.9pF(Typ.).MAXIMUM RATING (Ta=25 )...
LL4148 Switching Diodes LL34 Package SMD LL4148 Silicon Epitaxial Planar Switching Diode, You can get more details about LL4148 Switching Diodes LL34 Package SMD LL4148 Silicon Epitaxial Planar Switching Diode from mobile site on Alibaba.com
SILICON EPITAXIAL PLANAR SWITCHING DIODE 制造商 SSE SSE-IN4148.pdf 2021-02-26 12:07:47 更新 18.19KB 发送到邮箱 下载 打开 —— 芯片百科 —— 描述 特性 应用 —— 技术参数 —— —— 技术文章 —— 文献资料 —— 替代型号 —— IN4148 ...
A silicon epitaxial planar switching diode is a semiconductor device that combines the properties of being made from silicon, having a flat and planar structure, and being optimized for rapid switching in electronic circuits. It's an essential component in various ...
Silicon Planar Zener Diodes BZX55C FeaturesDO-34, DO-35 Package Silicon Epitaxial Planar Switching Diode Axial lead Silicon Planar Zener Diodes Zener voltage: 0.8~75V, peak pulse power: 500mWDiodes,Rectifiers and Transistors Full List General Rectifier Diode 1.0A Surface Mount Rectifier M7 (SMD...
BL Galaxy ElectricalProduction specificationSilicon Epitaxial Planar Diode1N4148WDocument number: BL/SSSDA001www.galaxycn.comRev.A1FEATURESPb 数据表 search, datasheets, 电子元件和半导体, 集成电路, 二极管, 三端双向可控硅 和其他半导
部件名: KDS114. 功能描述: SILICON EPITAXIAL PLANAR DIODE (VHF TUNER BAND SWITCH APPLICATIONS). Page: 2. 制造商: KEC(Korea Electronics).
A switching characteristic of fabricated GaN/ PSi heterojunction photodiode at different substrate temperatures. Full size image Figure 26 Rise time and fall time of GaN/ PSi nanostructures made by the PLD process at substrate temperatures between 200 and 400 °C. ...
Several optimized doping levels in the device layer allow for modulator integration, germanium epitaxial growth and associated doping for photodiode integration. A back-end-of-line (BEOL) stack can include several metallization routing layers and intermetal dielectrics that serve as both electrical ...