While the slurry is the most critical part of the CMP process, the pad must be compatible with the slurry. This is the only way to achieve the desired planarity while also preventing scratches or contamination of the SiC wafer surface. Investigation of different pad materials indicates that the...
2022年全球碳化硅SiC抛光液市场规模约2.9亿元,2018-2022年年复合增长率CAGR约为 %,预计未来将持续保持平稳增长的态势,到2029年市场规模将接近12亿元,未来六年CAGR为21.4%。 碳化硅SiC抛光液(SiC CMP Slurry)作为第三代宽带隙半导体材料的代表,由于其具有禁带宽度大(~Si的3倍)、高热导率(~Si的3.3倍或GaAs的10倍...
碳化硅SiC抛光液(SiC CMP Slurry)作为第三代宽带隙半导体材料的代表,由于其具有禁带宽度大(~Si的3倍)、高热导率(~Si的3.3倍或GaAs的10倍)、高电子饱和迁移速率(~Si的2.5倍)、高击穿电场(~Si的10倍或GaAs的5倍)等突出特性,在高温、高压、高频、大功率电子器件领域和航天、军工、核能等极端环境应用领域有着不...
Chemical mechanical planarization (CMP) of on-axis Si-face SiC wafer using catalyst nanoparticles in slurry. Surf Coatings Technol. 2014;251:48-55.Zhou, Y.; Pan, G.S.; Shi, X.L.; Gong, H.; Luo, G.H.; Gu, Z.H. Chemical mechanical planarization (CMP) of on-axis Si-face SiC ...
CMP技术首先利用化学反应对SiC晶圆进行表面改性, 降低其表面硬度, 然后利用软磨粒与晶圆表面改性层的机械摩擦作用将改性层去除, 通过化学作用与机械作用的不断交替, 最终实现SiC晶圆的抛光, 获得高质量表面[20,21].在CMP技术的抛光机理研究方面, Lee等[22]揭示了碱性SiO2抛光液对SiC的表面改性过程, 并提出了SiC...
In tools for wafer manufacturing, we’ve also equipped our post-CMP tool with doubled-sided brushing and a clean step. This removes all the slurry and SiC residues after wafer polishing. Our tools used for cleaning during the various device manufacturing steps are also equipped with handling sy...
In tools for wafer manufacturing, we’ve also equipped our post-CMP tool with doubled-sided brushing and a clean step. This removes all the slurry and SiC residues after wafer polishing. Our tools used for cleaning during the various device manufacturing steps are also equipped with handling sy...
R esearch Progress of SiC CMP Li X iang,Y ang H ongxing,Y u Y an,Xu Dehong (The46th Research Institute,CETC,Tianjin300220,China)Abstract:The development of SiC polishing technology,the geometry parameter and surface quality of SiC wafer which effect on the yield of device are introduced....
Chemical mechanical planarization (CMP) of on-axis Si-face wafer using catalyst nanoparticles in slurry. Surface and Coatings Technology, 251, 48–55. Article Google Scholar Zhou, Y., Pan, G. S., Shi, X. L., et al. (2015). Effects of ultra-smooth surface atomic step morphology on ...
The effect of slurry composition and wafer flatness on a material removal rate (MRR) and resulting surface roughness which are evaluation parameters to determine the CMP characteristics of the on-axis 6H-SiC substrate were systematically investigated. 10 脳 10 mm~2 6H-SiC substrates...