内容提示: I蟊蔓星垦蚕薹三鲎垦耋螫垦墓堑整剑鱼王茎皇塑鱼SiC(0001)面和(000—1)面CM P抛光对比研究潘章杰,冯玢,王磊,郝建民(中国电子科技集团公司第四十六研究所,天津300222)摘要:研究了SiC衬底(0001)面和(000一1)面不同的CMP抛光特性。分别采用pH值为10.38和1.11的改性硅溶胶抛光液对SiC衬底的(0001...
团材料制备工艺与设备■‘j鱼堇鱼SiC(0001)面和(000—1)面CMP抛光对比研究潘章杰,冯玢,王磊,郝建民(中国电子科技集团公司第四十六研究所,天津300222)摘要:研究了SiC衬底(0001)面和(000.1)面不同的CMP抛光特性。分别采用pH值为10-38和1.11的改性硅溶胶抛光液对SiC衬底的(0001)Si面和(000.1)C面进行对比抛光实验...
摘要 研究了SiC衬底(0001)面和(000-1)面不同的CMP抛光特性.分别采用pH值为10.38和1.11的改性硅溶胶抛光液对SiC衬底的(0001)Si面和(000-1)C面进行对比抛光实验.使用精密天平测量晶片抛光前后的质量,计算... 关键词 碳化硅;(0001)Si面;(00...
2005/06/24 @研究室Semi. 1 4H-SiC(000-1)C及び(11-20)面における pnダイオードの逆特性 Ref. 'Reverse characteristics of pn diodes on 4H-SiC(000-1) C and (11-20)face' Yasunori Tanaka, Kenji Fukuda, and Kazuo Arai ほか Applied Physics Letters Volume84 Number10 2004 M1 坂本愛理 200...
Silicon carbide double-implanted metal-oxide-semiconductor field-effect transistors (DIMOSFETs) were fabricated on 4H-SiC (000-1) carbon face. The effect of current spread layer (CSL) structure was studied. 1.9 mm x 1.9 mm DIMOSFETs were characterized from room temperature to 300 degrees C. ...
1.SiC单晶的制造方法,其为使晶种基板与具有从内部向液面温度降低的温度梯度的Si-C溶液接触从而使SiC单晶生长的SiC单晶的制造方法,其中,所述晶种基板为4H-SiC,该制造方法包括: 将所述晶种基板的(000-1)面作为生长面, 将所述Si-C溶液的表面中所述晶种基板的生长面接触的区域的中央部的温度设为1900°C以上,和...
SiC lateral double RESURF MOSFETs have been fabricated on the 4H-SiC (000-1)C face. By utilizing the C face, the channel resistance can be reduced because the C-face MOSFETs show higher channel mobility than the Si-face MOSFETs. In addition, by employing the double RESURF structure, the ...
Monolayer growth modes of Re and Nb on 4H-SiC(0001) and 4H-SiC(000(1)over-bar) Auger electron spectroscopy (AES) and secondary electron emission have been used to specify the room temperature monolayer adsorption characteristics of Re... KW Bryant,MJ Bozack 被引量: 0发表: 0年 Structural...
N2 - We propose an atomistic model to study the interface properties of mis-oriented (turbostratic) epitaxial graphene on the 6H-SiC (000-1) surface. Using calculations from first principles, we compare the energetics and structural/electronic properties of AB and turbostratic stacking sequences wit...
(6)将x射线定向仪的探测器固定在(000y)面发生布拉格衍射位置处,测量a'o、b'o、c'o、d'o方向的衍射角,此时,平行于晶体偏向的方向衍射角会发生变化,变化值为晶体的偏角,而垂直于晶体偏向的方向不会发生变化,由此可知a'o、b'o、c'o、d'o方向的理论衍射角。若实际测得的a'o、b'o、c'o、d'o方向衍射...