Keywords:silicon;directbonding;FTIR;XPS 1 引言 硅/硅直接键合是将两片镜片抛光的硅片经过表面清洗、活化处理、室温贴合及高温热处理等手段而实现一体化的新技术,虽然起步较晚,但发展极为迅速,目前已得到了广泛的应用[14]。但对其键合工艺、界面性质、键合机理等的研究还并不成熟,有待作进一步的探讨,使其从实验...
Keywords(p)asmaetching(micro)e(ectro)mechanica,systems(si)icondirectbonding 1引言 硅片的直接键合技术的起源是1985年底J.B.Lasky(1)提出的硅片熔合技术。相对于MOCVD,LPE和MBE等这些常用的外延生长方法,直接键合技术以它独特的优越性引起了人们广泛的关注。直接键合技术无需任何粘合剂和外加电场,只需将两片表面...
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(p-d)π bonding in the Si-O bond was found to be of minor importance, while the ionic char...
Short distances in the three-dimensional platinum-metal silicon network indicate strong, covalent Pd(Pt)-Si-bonding (d(Pd-Si) = 240.2 to 256.1 pm; d(Pt-Si) = 237.1 to 258.5 pm). In addition, homonuclear bonding seems to be important, resulting in the formation of Si4-tetrahedra (d(...
Direct bonding is an attractive technique for joining two mirror polished surfaces without any intermediate materials. Vacuum ultraviolet (VUV) irradiation is an effective way for cleaning surfaces as well as increasing hydrophilicity with less surface damage. However, its applications for the direct bond...
Atropisomers are important organic frameworks in bioactive natural products, drugs as well as chiral catalysts. Meanwhile, silanols display unique properties compared to their alcohol analogs, however, the catalytic synthesis of atropisomers bearing sila
T. Hiratani et al., "SOA Integrated InP/Si Hybrid Tunable Laser by Utilizing Chip-on-Wafer Hydrophilic Bonding,"Photonics Electronics Technology Research Association (PETRA), Tokyo, Japan; Transmission Devices Laboratory, Sumitomo Electric Industries, Ltd., Yokohama, Kanagawa, Japan; Dept. of Electr...
The attachment of Ni head groups on the oxide portion of the partially transformed Si substrate by deposition of LB film, essentially weaken the nearby Si–Si bonding, which then readily react with oxygen to form oxides. It is observed that depending upon the amount of attached Ni head groups...
Low-Temperature Wafer-to-Wafer Bonding Using Intermediate Metals利用金属过渡层低温键合硅晶片 在Si/Si之间采用Ti/Au金属过渡层,实现了Si/Si低温键合,键合温度可低至414 ℃.采用拉伸强度测试对Si/Si键合结构的界面特性进行测试,结果表明,键合强度高于1.27MPa;I-V... 张小英,陈松岩,赖虹凯,... - 《腐蚀科学与...