Introduction, "Si-Si Bonding Using RF and Microwave Radiation," IEEE Transducers Conference Proceedings, pp. 226-229, 2001.K. Thompson, Y. B. Gianchandani, J. Booske, and R. Cooper, "Si-Si bonding using RF and microwave radiation," in Tech. Dig., IEEE Inter- national Conference on ...
The amount of Si-Si bonding in CVD oxynitride usually represents a small fraction of the total silicon (<5%) and we show that, in this case, the subtractive method of determination is inadequate due to the uncertainty in the values obtained from typical elemental analysis (with Rutherford ...
Silicon Nanophotonics and Photonic Wire Bonding :硅纳米光子学与光子的引线键合 一种利用微晶锗薄膜实现低温Si-Ge和Si-InP键合的方法 Ⅲ-Ⅴ族Si异质键合及键合InGaAsSi短波红外光电探测器研究 Effect of swirl ratio on performance of semi-direct injection SI… Brugni_si_si_si si48xx atdd 編程指南 - sili...
27. K. Tanabe, K. Watanabe, and Y. Arakawa, “III-V/Si hybrid photonic devices by direct fusion bonding,” Sci.Rep. 2, 349 (2012.)28. J. Yang, P. Bhattacharya, and Z. Mi, “High-performance In 0.5 Ga 0.5 As/GaAs quantum-dot lasers on silicon with multiple-layer quantum-dot...
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Keywords:silicon;directbonding;FTIR;XPS 1 引言 硅/硅直接键合是将两片镜片抛光的硅片经过表面清洗、活化处理、室温贴合及高温热处理等手段而实现一体化的新技术,虽然起步较晚,但发展极为迅速,目前已得到了广泛的应用[14]。但对其键合工艺、界面性质、键合机理等的研究还并不成熟,有待作进一步的探讨,使其从实验...
随着第三代SiC基功率模块器件的功率密度和工作温度不断升高,器件对于封装基板的散热能力和可靠性也提出了更高的要求[1,2,3]。以往被广泛使用的直接覆铜(Direct-Bonding-Copper,DBC)陶瓷基板是通过共晶键合法制备而成,铜和陶瓷之间没有粘结材料,在高温服役过程中,往往会因为铜和陶瓷(Al2O3或AlN)之间的热膨胀系数...
"Monolithic integration of various-type III-V epitaxial structures on silicon-photonics platform using chip-on-wafer hydrophilic bonding process," presented at the IEEE SiPhotonics, Photonics Electronics Technology Research Association (PETRA), Sumitomo Electric Industries, Ltd., and Tokyo Institute of Te...
1) silicon-grass direct bonding(SGDB) Si-玻璃直接键合(SGDB) 2) Si/Si direct bonding Si/Si直接键合 1. A physical model of the interfacial stresses of Si/Si direct bonding was presented based on the Suhire theory of stresses presented in bimetal strips,and the analytical equations of the...
Low-Temperature Wafer-to-Wafer Bonding Using Intermediate Metals利用金属过渡层低温键合硅晶片 在Si/Si之间采用Ti/Au金属过渡层,实现了Si/Si低温键合,键合温度可低至414 ℃.采用拉伸强度测试对Si/Si键合结构的界面特性进行测试,结果表明,键合强度高于1.27MPa;I-V... 张小英,陈松岩,赖虹凯,... - 《腐蚀科学与...