Moreover, the FTIR/RAS Si-hydride peak shifts to the lower wave numbers after CH 3 SiH 3 exposure. These results suggest that CH 3 SiH 3 is adsorbed without breaking the Si C bond on Ge(100) and Si(100) at 400–500°C.doi:10.1016/S0169-4332(00)00185-9Toshinori Takatsuka...