Moreover, the FTIR/RAS Si-hydride peak shifts to the lower wave numbers after CH 3 SiH 3 exposure. These results suggest that CH 3 SiH 3 is adsorbed without breaking the Si C bond on Ge(100) and Si(100) at 400–500°C.doi:10.1016/S0169-4332(00)00185-9Toshinori Takatsuka...
In order to link the materials properties with their adsorption behavior, the state and location of exchanged transition metals after calcination at 500掳C were first probed using N2 sorptiometry at 77K, DRS-UV鈥揤is spectroscopy, XRD and FTIR of adsorbed CO and NO. Adsorption capacities at ...
Self-assembled fullerene-diaminoaodecane multilayer films were prepared on planar silicon wafer and quartz plate and on nonplanar fumed silica surfaces, and the growth of each layer and its uniformity was charackrized by using FTIR, UV, contact angle measurement and ellipsometric measurement. It ...
The solution-phase reactions of octadecylsilanes with different headgroups (C18H37SiH3, C18H37Si(OCH3)(3), C18H37SiCl3, and C18H37Si(CH3)(2)Cl) and of octadecylphosphonic acid (Cs18H37PO3H2) with titanium dioxide (anatase) were investigated. Chemical analysis and FTIR suggested that all...