一般用Silicon wafer (100)做衬底，但是PDF卡片上只有(400)的峰，为什么不能直接有(100)的峰位？这两...
多孔单晶硅纳米线 Fig. 4. Porous single-crystal Si nanowires.aSEM image of the wafer;bXRD patterns;cTEM image; anddSAED pattern along the [011] direction [15] Si基纳米结构的充电容量和循环20周的库伦效率 Fig. 5. (a) Charge capaci...
X-ray analysis of Ag nanoparticles on Si wafer and influence of Ag nanoparticles on Si nanowire-based gas sensorXRDSilver nanoparticlesNano-crystalline sizeReducing gasesGas sensorHere, the room temperature deposition of silver (Ag) nanoparticles (NPs) on silicon (Si) substrate has been carried out...
Indeed, beside the 3 diffraction peaks caused by the Si(111) substrate, only one additional peak can be detected, which is in fact a combination of the SiC(111) peak (~35.8°) and the AlGaN(002) peak (~36.1°) as confirmed by a high-resolution ω -2θ XRD scan (not shown here...
Figure 4 shows XRD analyses of FePt samples which were deposited at 500 °C with 10 nm thickness using direct synthesis method. In Fig. 4b, c MgO and Ag interlayers are used, respectively, and Fig. 4a shows the sample deposited without any sublayer on Si wafer. In these figures, every...
Here, unexpected nanostructure evolution during Si-I → Si-II PT is revealed by combining molecular dynamics (MD), crystallographic theory, generalized for strained crystals, and in situ real-time Laue X-ray diffraction (XRD). Twinned Si-II, consisting of two martensitic variants, and ...
The peaks in the XRD pattern of the SiNWs were indexed with the lattice planes (111), (220) and (311) of the diamond-like Si. The HRTEM observation indicated that the SiNWs consisted of the crystalline cores and amorphous shells. Moreover, the crystalline plane (111) of the Si crystal...
Makyoh topography was used to determine the deformation maps of the wafers and the results were compared with X-ray diffraction (XRD). Raman spectroscopy was used to analyze stress in the 3C-SiC films. These results were discussed in order to explain the wafer deformation mechanisms with the ...
realized the Si NWs, Si NW/CuI systems, SEM and EDX, XRD, and PL, interpreted data, and wrote the paper. A.A.L. performed RBS, SEM measurements, and participated in the interpretation of the data and in writing the paper. D.M. and P.M. contributed to the Si NWs and Si NWs/...
HRXRD半高宽(°) @(0002) <1.5° 总厚度变化(TTV) < 7um 翘曲度(Warp) <30um 弯曲度(Bow) -10 ~15um 包装(Packaging) 单片/多片晶圆盒 关于企业 化合积电(厦门)半导体科技有限公司,是一家专注于第三代(宽禁带)半导体衬底材料和基于GaN材料的电力电子、射频器件研发和生产的高科技企业。公司致力于为客...