surface reconstruction/ Si(100) waferpulsed laser ablationA quick and relatively simple technique for stripping offSi wafers of its native oxide and carbon impurities,using pulsed laser ablation at room temperature, is presented. In achamber at 10-10 Torr, an oxidized Si(100)surface is ablated ...
取向<100>、<110>、<111>等 相关产品目录: 铽镓石榴石(TGG)晶体基片 氮化硼(BN)晶体 Ge晶体基片 LGS 硅酸镓镧晶体 二氧化碲(TeO2)晶体 掺钪的钆镓石榴石单晶 镓酸锂(LiGaO2)晶体基片 钨酸铅(PbWO4)晶体基片 硫化镉(CdS)晶体基片 Gd0.63Y2.37Sc2Ga3O12(简称:GYSGG) ...
Silicon wafer is a very thin round disk cut from high-purity silicon. A round silicon ingot is sliced to thicknesses of approximately 1mm. The surfaces of the resulting disk are polished carefully, then it is cleaned, resulting in the completed wafer. Silicon wafers are made from high...
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硅片Si wafer 硅单晶价格:价格电议产品详情:Si 用途:用作半导体材料,大功率晶体管,整流器,太阳能电池等。晶体结构 面心立方熔点(℃) 1420密度 2.4(g/cm3)禁带宽度(e... 纯度:99% 用途:科研 品牌:西安齐岳生物科技 产地:西安 是否进口:否 立即询价 ...
Nickel electroless deposition process on chemically pretreated Si(100) wafers in aqueous alkaline solutionElectroless depositionSiliconChemical pretreatmentMetallic nano-dot arraysPretreating Si wafer surfaces with hydrochloric acid and hydrogen peroxide mixture (HPM) or ethanol was found to enhance the ...
N-type Prime Wafer Product Name: N type prime wafer Material: Si Diameter: 76.2mm-200mm Thickness: 200-1500um Dopant: Phos./As./Sb... Read More <110> Prime Wafer Material: Silicon Size: 2"/3"/4"/5"/6"/8" Thk.: 100-1500um±25um Dopant...
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Multi-wafer 3C–SiC heteroepitaxial growth on Si(100) substrates[J] . Sun Guo-Sheng,Liu Xing-Fang,Wang Lei,Zhao Wan-Shun,Yang Ting,Wu Hai-Lei,Yan Guo-Guo,Zhao Yong-Mei,Ning Jin,Zeng Yi-Ping,Li Jin-Min.Chinese Physics B . 2010 (8)...
Epitaxial Silicon Wafer(Epi Wafer) is a layer of single crystal silicon deposited onto a single crystal silicon wafer(note: it is available to Grow a layer of poly crystalline Silicon layer on top of a highly doped Singly crystalline Silicon wafer.