Jutarosaga T, Jeoung JS, Seraphin S (2005) Infrated spectroscopy of Si-O bonding in low-dose low-energy separation by implanted oxygen materials. Thin Solid Films 476:303-311Jutarosaga T, Jeoung JS, Seraphin S. Infrared spectroscopy of Si–O bonding in low-dose low-energy separation by ...
Energy-band alignment of atomic layer deposited (HfO2)x(Al2O3)1 − x gate dielectrics on 4H-SiC. We study a series of (HfO2)x(Al2O3)1 − x /4H-SiC MOS capacitors. It is shown that the conduction ... Dong,Lin-Peng,Song,... - 《Chinese Physics B》 被引量: 10发表: 2015...
Electron spectroscopy studies of thermally grown SiO2on Si, α‐quartz, α‐cristobalite, and fused silica show that the variation in the Si–O–Si bond angle in SiO2does not cause significant change in the charge transfer in the Si–O bond. The relative core level shifts are sensitive to ...
,Haynes,T.,E.,Holland,O.,W.,Gossmann,H.-J.,L.,Rafferty,C.,S.,Gilmer,G.,H. 摘要: Measurements of the binding energy (E[sub b]) of vacancies to vacancy clusters formed in silicon following high-energy ion implantation are reported. Vacancy clusters were created by 2 MeV, 2×10[...
Energy calculation of K1L1 multiply ionized Kβ satellite spectra emitted from Al, Al2O3, Si and SiO2doi:10.1016/0168-583X(95)00881-0... T.,Yamamoto,and,... - 《Nuclear Instruments & Methods in Physics Research》 被引量: 1发表: 1996年 Calculation of Al and Si KLV auger energies and...
In previous studies, this phenomenon has been attributed to the higher O-S bonding energy compared to that of the Si-S bond27,39. However, we believe that the poor hydrophilicity of the Si wafer is the main reason underlying the impossibility of direct growth of MoS2 crystals on nonoxide ...
R., Bonding in Silicates: Investigation of the Si L2,3 Edge by Parallel Electron Energy-Loss SpectroscopyThe Si L 2,3 core-loss edge can be used to probe the crystal chemistry around Si, ... LAJ Garvie,PR Buseck - 《American Mineralogist》 被引量: 2发表: 1999年 Bonding in silicates:...
In the case of PHMS, broad double peaks at around 28.0 and 24.5 eV are due to s (S 3s–O 2s) and p (S 3p–O 2s) bondings of [–S–O] group, and the broad peak at around 19.0 eV results from s {(C 2s–C 2s), (S 3s–C 2s)}, and p (S 3p– C 2s) bonding...
The integrated intensity of the Si-H stretching mode in 20 triorganosilanes, R3SiH, in which the R substituents exhibit no dπ-pπ bonding with the silicon... AN Egorochkin,NS Vyazankin,NS Ostasheva,... - 《Journal of Organometallic Chemistry》 被引量: 1发表: 1973年 Cationic Ring-...
The minimum energy structures were produce... W Tiznado,OB OñA,MC Caputo,... - 《Journal of Chemical Theory & Computation》 被引量: 20发表: 2009年 Supramolecular complexes based on molybdates and different Co(III)-ammine units via electrostatic and H−bonding interactions The rational ...