,H. 摘要: Measurements of the binding energy (E[sub b]) of vacancies to vacancy clusters formed in silicon following high-energy ion implantation are reported. Vacancy clusters were created by 2 MeV, 2×10[sup 15] cm[sup -2] dose Si implant and annealing. To prevent recombination of ...
The minimum energy structures were produce... W Tiznado,OB OñA,MC Caputo,... - 《Journal of Chemical Theory & Computation》 被引量: 20发表: 2009年 Supramolecular complexes based on molybdates and different Co(III)-ammine units via electrostatic and H−bonding interactions The rational ...
A free energy model (FEM) for predicting the bonding in amorphous covalent alloys has been developed and applied to alloys of a-Si. The bonds favored by chemical ordering (CO) and their relative concentrations have been determined by minimizing the Gibbs free energy of mixing G M = H M -...
The peak in the range of 5–9 eV is owing to p {(C 2p–H 1s), (C 2p–C 2p)} bondings and p (lone pairs) of oxygen. CONCLUSIONS In the previous works,9,10 we could not obtain the reasonable calculated CEBE values to the experimen- tal ones of third periodic 2p for the ...
H Y.,Liu,D J.,... - 《Materials & Design》 被引量: 19发表: 2013年 THE WETTABILITY AND INTERFACE BONDING OF Co-Ti, Ti-Zr-Cu HIGH TEMPERATURE FILLERS ON Si_3N_4 CERAMICCo—Ti,Ti—Zr—Cu高温钎料在Si3N4陶瓷上润湿性与界面连接 In this paper, the wettability experiments of Co-Ti, ...
The integrated intensity of the Si-H stretching mode in 20 triorganosilanes, R3SiH, in which the R substituents exhibit no dπ-pπ bonding with the silicon... AN Egorochkin,NS Vyazankin,NS Ostasheva,... - 《Journal of Organometallic Chemistry》 被引量: 1发表: 1973年 Cationic Ring-...
To predict potentially stable molecules with Si(triple bond)C triple bonding, theoretical calculations at the B3LYP/ 6-311G(d) and CCSD(T)/6-311G(2df) (single-point) levels were employed to study the structures, energetics, and isomerization of various SiCN2 isomers. A schematic potential ...
Electron energy-loss near-edge structure (ELNES) is a technique that can be used to measure the electronic structure (i.e. bonding) in materials with subna... V.,J.,Keast,... - 《Journal of Microscopy》 被引量: 240发表: 2001年 Bonding structure in amorphous carbon nitride: A spectros...
Using high resolution electron energy loss spectroscopy (EELS) we have studied the adsorption of acetylene, enthylene, and cyclohexane at 150 K and subsequ... S Lehwald,H Ibach - 《Surface Science》 被引量: 358发表: 1979年 Evidence for the formation of stable alkylidyne structures from C3 ...
In previous studies, this phenomenon has been attributed to the higher O-S bonding energy compared to that of the Si-S bond27,39. However, we believe that the poor hydrophilicity of the Si wafer is the main reason underlying the impossibility of direct growth of MoS2 crystals on nonoxide ...