Tan T T,Liu Z T,L W T.et al.Chemical structure of HfO 2/Si interface with angle-resolved synchrotron radiation photoemission spectroscopy.Chinese Physics. 2008谭婷婷;刘正堂;刘文婷;张文华.Chemical Structure of HfO2/Si Interface with Angle-Resolved Synchrotron Radiation Photoemission Spectroscopy.中国...
HfO2/SiO2 interface chemistry studied by synchrotron radiation x-ray photoelectron spectroscopy X-ray photoelectron spectroscopy using synchrotron radiation has been used to investigate the HfO2/SiO2 interface chemistry of high-quality 0.6 and 2.5 nm ... O Renault,D Samour,JF Damlencourt,... - 《...
Characterisation of sol-gel prepared (HfO2)x(SiO2)1-x (x=0.1, 0.2 and 0.4) by 1H, 13C, 17 O and 29Si MAS NMR, FTIR and TGA. The HfO 2–SiO 2 system is attracting interest as a possible new dielectric material in semiconductor devices. Knowledge of the location of hafnium within ...
Band bending measurement of HfO2/SiO2/Si capacitor with ultra-thin La2O3 insertion by XPS The flat band voltage shifts of HfO2/SiO2/nSi capacitors with ultra-thin La2O3 insertion at HfO2/SiO2 interface have been confirmed using hard X-ray p… [ K. Tsutsui,M Adachi,J Song,... - 《Ap...
HfO2-assisted SiO2 reduction in HfO2/SiO2/Si stacks 来自 Elsevier 喜欢 0 阅读量: 13 作者:Xiuyan,Li,Takeaki,Yajima,Tomonori,Nishimura,Kosuke,Nagashio,Akira,Toriumi 摘要: The ultra-thin SiO2 interface layer (SiO2-IL) in the HfO2/SiO2/Si stack was found to be reduced during the ultra-high...
Identification of electron trap location degrading low-frequency noise and PBTI in poly-Si/HfO2/interface-layer gate-stack MOSFETs The pre-existing electron trap is considered to be generated by N incorporation into the IFL in the fabrication process of gate-first process... T Matsuki,R Hettiarach...
Band offsets of atomic layer deposited Al2O3 and HfO2 on Si measured by linear and nonlinear internal photoemission We present measurements of band alignment of atomic layer deposited high-k dielectrics on Si(100) using linear internal photoemission (IPE), detected by me... M Lei,JH Yum,SK...
(P b0, P b1), archetypal for the Si/SiO 2 interface, the (1 0 0)Si/LaAlO 3 stack is found to be truly abrupt, i.e., no evidence for an Si/SiO 2( x )-type transition in contrast with the Si/HfO 2 entity, where the interface is found to be Si/SiO 2( x ) type in ...
One potential EBC bond coat that has been proposed is a composite layer of silicon and hafnium oxide (Si-HfO2). This coating concept intends to provide a well-bonded interface between silicon and the substrate, similar to the 'pure' metallic silicon bond coat, but with a higher temperature ...
R. et al. An accurate determination of barrier heights at the HfO2/Si interfaces. Journal of Applied Physics 96, 23. Aberle, A. G., Glunz, S. & Warta, W. Impact of illumination level and oxide parameters on Shockley–Read–Hall recombination at the Si-SiO2 interface. J. Appl. Phys....