Splitting may be ignored for Si2p peaks from silicon compounds.Observed as either two distinct, ...
1.关于自旋耦合导致的Si 2p分裂为Si 2p1/2和2p3/2,审稿人要考虑自旋耦合因素,但是测出来的SiO2还是SiC都是单峰,没有分裂,怎么考虑自旋耦合因素呢?而且我看大部分人的论文好像也没有拟合“Si 2p1/2和2p3/2”(没有涉及到双重分裂峰,就一个2p,没有2p1/2和2p3/2,)?所有有些困惑! 2.后面一句还说...
查手册，Si 2p 1/2并没有Si C O相关的物质啊。发自小木虫Android客户端
8, 2004 XPS of Si- and S-Containing Molecules by DFT Calculation Figure 1. Simulated valence X-Ray photoelectron spectra of sulfur-based polymers with the experimental spectra, (a) PETHS; (b) PHMS; (c) PPS. Table VII. Observed peaks, VIPs, main AO photoionization cross-section (PICS),...
出MnSi薄膜和MnSi】.7纳米线,利用STM和XPS 对薄膜和纳米线作了系统的表征,分析了Mn2p 和Si2p谱,发现薄膜和纳米线在短暂暴露于空气 后表面会出现氧化层,并计算了氧化态的锰分别 在MnSi薄膜和MnSi1.7纳米线中的相对含量. 2实验 MnSi薄膜和MnSi】.7纳米线的制备和STM 表征是在德国Omicron公司生产的超高真空 分子...
Zr silicide formation was clearly observed when a pO2 of 1*10−6 mbar was used, as concluded from the existence of Zr0 peaks together with a shoulder at the low binding energy side of the Si2p bulk peak25. The intensities of these features were lower at 1*10−5 mbar, and ...
However, it is important have observed PL peaks ∼2.5, 2.9 and 3.0 eV in Si-SiO2 NCps. PL to note that the beam size (∼1 cm × 1 cm) in XPS covers the full peak ∼3 eV has been attributed to either direct band gap transition sample. Therefore, an average signal from XPS ...
Chemical surface composition analysis of the Si powders was conducted using X-ray photoelectron spectroscopy (XPS, PHI 5000 VersaProbe) equipped with an Al Kα X-ray radiation source operating at 1486.6 eV. All spectra were calibrated using C (sp2) as a reference binding energy of 284.6...
XPS spectra (F 1s, O 1s, C 1s, S 2p, P 2p, Si 2p, Li 1s) of the SiOx-based anodes after 50 cycles from the half-cells with different electrolytes. Full size image In the F 1s spectra of all cycled electrodes, there are two peaks at ≈685.1 eV and ≈687.7 eV, which...
(c) Schematic plots for simulated Auger peaks by assuming α-α and α-β bonds with a layered structure. lowered kinetic energy of the Ni Auger transition line confirms the formation of Ni-Si compounds at the interface due to a change in the chemical environment of the Ni atoms from Ni-...