Early stages of Si(111) oxidation via photochemical decomposition of N 2O has been further studied with X-ray photoelectron spectroscopy (XPS). In order to reveal the chemical nature of the oxygen atoms bonded to the top-most silicon atoms, a hydrogenated silicon radical, SiH x, which was ...
Fig. 2b is the Si 2p XPS spectrum; the major peak around 103 eV splits into two different peaks, indicating different chemical states of Si element existing in the as-prepared material. The peak at 102.3 eV can be assigned to Li2SiO3, which is in agreement with the results reported in...
SAED and XPS patterns indicated that the growing films were of hexagonal polyˉcrystalline GaN films and the SEMimage showed that the films were composed of uniform GaN nanoparticals with diameters of50～100nm.The PLpeak was at344nmwhich was blue shifted fromthat of the bulk GaN by21nm.This...
the BNTH0.05film as a representative sample was characterized by the X-ray photoelectron spectroscopy (XPS), as shown in Fig.4. The peak positions of different atoms were calibrated by internally referencing the adventitious carbon at a binding energy of 284.6 eV. As evident in the Fig....
The valence band onset energy of 2.1 eV was observed from the XPS valence band spectrum, clearly justifies the alignment of Fermi level to the donor level created due to the presence of oxygen vacancies which were observed in the PL spectrum. The elemental ratio In:O in as prepared In2O3...
As the film thickness increased, the intensity of the (200) PbSe prominent diffraction peak increased, while the (220) peak almost vanished, indicating the primary growth direction. The change rate between the light and dark resistance increased with the film thickness, and the maximum of 64.76%...
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All the results obtained from temperature-dependent PL spectra, FTIR spectra, and XPS spectra disclosed that the light emission from a-SiN_xO_y film can be originated from recombination via luminescent centers associated with N_x-Si-O_y bonding configuration, and the redshift of PL peak with ...
From the XPS analyses, there was a significant formation of W-O-Si, W-O-W, and Si-O-Si bonding in STA-SG compared to that in STAB. The main spectra of O1s (90.74%, 531.5???eV) followed by other O1s peak (9.26%, 532.8???eV) were due to the presence of W-O-W and W-O...
XPS spectra of O1s peak showed different onset and energy seperation for each sample. Energy seperation between O1s peak and onset of plasmon is 8.4eV for 5nm lead to band gap of Al2O3layer. But and in case of 2nm this value is 9.2eV, hence, it is likely corresponds to SiO2...