Semiconductor to metal transition in MoTe2. J. Solid State Chem. 1970, 2 (2), 299-302.Vellinga, M.B., de Jonge, R. & Haas, C. Semiconductor to metal transition in MoTe2. Journal of Solid State Chemistry 2, 299-302 (1970).
Electronic excitation-induced semiconductor-to-metal transition in monolayer MoTe_2Reversible polymorphism of monolayer transition-metal dichalcogenides (TMDC) has currently attracted much attention from both academic and applied perspectives. Of special interest is MoTe_2, where the stable semiconducting 2H ...
Dynamic control of conductivity and optical properties via atomic structure changes is of technological importance in information storage. Energy consumption considerations provide a driving force towards employing thin materials in devices. Monolayer transition metal dichalcogenides are nearly atomically thin mat...
Moiré materials have emerged as a platform for exploring the physics of strong electronic correlations and non-trivial band topology. Here we review the recent progress in semiconductor moiré materials, with a particular focus on transition metal dicha
Coplanar semiconductor-metal circuitry defined on few-layer MoTe2 via polymorphic heteroepitaxy. Crystal polymorphism selectively stabilizes the electronic phase of atomically thin transition-metal dichalcogenides (TMDCs) as metallic or semiconducting,... Ji,Ho,Sung,... - 《Nature Nanotechnology》 被引量...
“Dome-Shaped" Superconducting Phase Discovered in a Novel Transition Metal Zirconide Researchers at Tokyo Metropolitan University have discovered a novel superconducting material by synthesizing a new transition metal zirconide with varying iron-to-nickel ratios. 20 Jan 2025 Xallent and MPI Announce...
The covalent-ionic transition, the chemical activity of metal-semiconductor interfaces, and other topics related to the problem of Schottky barrier formation are discussed from a unified standpoint. Passive interfaces are defined as those where no valence bonds are formed between the adsorbed atoms and...
Large-bandgap materials such as hexagonal boron nitride (h-BN)27play a critical role in 2D materials, as its inert and ultraflat nature allows it to serve as a substrate for high-mobility 2D devices. Other large-bandgap materials include the transition-metal oxides (TMO) such as the 2H phas...
Substitutional doping in 2D semiconductor MoS2 was investigated by charge transition level (CTL) calculations for Nitrogen group (N, P, As, Sb) and Halogen group (F, Cl, Br, I) dopants at the S site of monolayer MoS2. Both n-type and p-type dopant levels are calculated to be deep mid...
This metal-semiconductor dichotomy allows construction of single-2D-material-based electronic devices with low contact resistance and low leakage currents. In particular, due to the interaction between Sn and the Si substrate, the semiconducting monolayer-SnO/Si(001) has a highly anisotropic band ...