Self-Aligned Etch in Semiconductor DevicesMethods of performing backside etching processes on source/drain regions and gate structures of semiconductor devices and semiconductor devices formed by the same are disclosed. In an embodiment, a semiconductor device includes a first transistor structure; a ...
使用原子层沉积技术(atomic layer deposition, ALD)在“mandrel”的表面和侧面沉积一层厚度相对比较均匀的薄膜(称为“spacer”材料)。使用反应离了刻蚀工艺把沉积的“spacer”材料再刻蚀掉,这个步骤被称为“etch back”。由于“mandrel”侧壁的几何效应,沉积在图形两侧的材料会残留下来,形成所谓的“spacer”。使用选择...
metal gate向下凹陷 向下凹陷的区域中填充氮化硅etch stop layer然后CMP磨平 然后覆盖一层氧化硅 最后进行contact patterning 最主要差异就是在metal gate的上面添加一层氮化硅和氧化硅,这样即使source/drain的contact overlaid on metal gate上,由于氮化硅介电质存在,也不至于短路,这样就大大提高了misalignment margin。
metal gate向下凹陷 向下凹陷的区域中填充氮化硅etch stop layer然后CMP磨平 然后覆盖一层氧化硅 最后进行contact patterning 最主要差异就是在metal gate的上面添加一层氮化硅和氧化硅,这样即使source/drain的contact overlaid on metal gate上,由于氮化硅介电质存在,也不至于短路,这样就大大提高了misalignment margin。
The percentages of the first and second gas may be varied during etching to provide a plasma that etches undoped oxide films or to provide an etch stop on such films. 展开 收藏 引用 批量引用 报错 分享 全部来源 求助全文 掌桥科研 相似文献...
向下凹陷的区域中填充氮化硅etch stop layer然后CMP磨平 然后覆盖一层氧化硅 最后进行contact patterning 最主要差异就是在metal gate的上面添加一层氮化硅和氧化硅,这样即使source/drain的contact overlaid on metal gate上,由于氮化硅介电质存在,也不至于短路,这样就大大提高了misalignment margin。
向下凹陷的区域中填充氮化硅etch stop layer然后CMP磨平 然后覆盖一层氧化硅 最后进行contact patterning 最主要差异就是在metal gate的上面添加一层氮化硅和氧化硅,这样即使source/drain的contact overlaid on metal gate上,由于氮化硅介电质存在,也不至于短路,这样就大大提高了misalignment margin。 上面的二维图可能...
A method for forming an opening through an interlayer to expose an underlying surface that retains high etch selectivity while having a relatively large process window to accommodate process variations. The method etches an interlayer under a first etching condition that forms a protective layer over ...
Device with polymer layers and two-step self-aligned source etch with large process window System and method for self-aligned etching. According to an embodiment, the present invention provides a method for performing self-aligned source etching process. The method includes a step for providing a ...
A SELF-ALIGNED PATTERING METHOD BY USING NON-CONFORMAL FILM AND ETCH BACK FOR SONOS MEMORY A method for fabricating a memory device with a self-aligned trap layer (1301, 1308) which is optimized for scaling is disclosed. In the present invention, a non-conformal film (1406, 1407) is depo...