US6451705 2000年8月31日 2002年9月17日 Micron Technology, Inc. Self-aligned PECVD etch maskUS6451705 Aug 31, 2000 Sep 17, 2002 Micron Technology, Inc. Self-aligned PECVD etch maskUS6451705 * Aug 31, 2000 Sep 17, 2002 Micron Technology, Inc. Self-aligned PECVD etch maskUS6451705 * 2000年8月31日 2002年9月17日 Micron Technology, Inc. Self-aligned PECVD etch ...
SAC(Self-Aligned Contact)工艺的详细介绍 Intel 22nm工艺中,关于contact连线有个细节工艺叫SAC,全称叫self-aligned contact,中文翻译叫自对准接触,有读者后台留言想了解具体细节,这篇文章详细介绍下SAC工艺。 简单来说说,SAC工艺就是在栅极gate上方添加一层保护性介电层,目的是防止源,漏极的contact与栅极gate短路。主...
Intel22nm工艺中,关于contact连线有个细节工艺叫SAC,全称叫self-aligned contact,中文翻译叫自对准接触,有读者后台留言想了解具体细节,这篇文章详细介绍下SAC工艺。 简单来说说,SAC工艺就是在栅极gate上方添加一层保护性介电层,目的是防止源,漏极的contact与栅极gate短路。主要原因是当时contact的pitch越来越小,source/d...
SADP技术在NAND闪存制造中尤为重要,尤其是在制造小于22nm的器件尺寸时。 自对准双重成像技术(Self-aligned Double Patterning , SADP)即,一次光刻完成后,相继使用非光刻工艺步骤(薄膜沉积、刻蚀等)实现对光刻图形的空间倍频。最后,使用另外一次光刻和刻蚀把多余的图形去掉[1]。 因此,SADP工艺的难度主要是如何对光刻、...
Self-aligned contact (SAC) etch with dual-chemistr 专利名称：Self-aligned contact (SAC) etch with dual- chemistry process 发明人：Kei-Yu Ko 申请号：US09532088 申请日：20000321 公开号：US06337285B1 公开日：20020108 专利内容由知识产权出版社提供 专利附图：摘要：The invention is a two-step dual-...
www.nature.com/scientificreports OPEN Switching from weakly to strongly limited injection in self-aligned, nano-patterned organic transistors received: 29 March 2016 accepted: 20 July 2016 Published: 27 September 2016 Karin Zojer1, Thomas Rothländer2, Johanna Kraxner3, Roland Schmied3, ...
Roy.Self-aligned selective-emitter plasma etchback and passivation process for screen-printed silicon solar cells. Solar Energy Materials . 1997D.S. Ruby,C.B. Fleddermann,M. Roy,S. Narayanan.  Self-aligned selective-emitter plasma-etchback and passivation process for screen-printed silicon ...
(NEt2)3-H2O ABC-type process is the most preferred one. It achieves the highest selectivity and the longest nucleation delay on the non-growth Cu region, both are critical for a reliable self-aligned oxide stacking. Nucleation on Cu is still inhibited when the film thickness is obtained ~5...
18. A method of performing a self-aligned litho-etch (SALE) process, comprising: forming a first cut layer on a first cut definition layer over a multi-layer hard mask comprising an upper layer and a lower layer; forming a cut layer opening within the first cut definition layer; forming ...
Etch stop layer for use in a self-aligned contact 专利名称：Etch stop layer for use in a self-aligned contact etch 发明人：Wei Tao 申请号：US10315573 申请日：20021209 公开号：US06861751B2 公开日：20050301 专利内容由知识产权出版社提供 专利附图：摘要：A self-aligned contact, and a method ...