We employ an atomically thin TiO2 interfacial layer between an n-type Si substrate and a nanometer-thick metallic layer, which is positioned beneath a transparent conductive oxide (TCO) layer, to create n-Si/TiO2/TiN/ITO multilayered Schottky-junction photodiodes. Without the typical p-n ...
半导体材料与技术讲义-Schottky junction 3.4Schottkyjunction3.4.1Schottkydiode FormationofaSchottkyjunctionbetweenametalandann-typesemiconductorwhenΦm>Φn.Thereisanelectron-depletedregionofawidthWinwhichthereareexposedpositivelychargeddonors,inotherwords,netpositivelyspacecharge.Thisregionconstitutesaspacechargelayer(...
Schottky-junction网络肖特基结;萧特基接面网络释义 1. 肖特基结 石墨烯和硅当他们结合到一起时,形成肖特基结(Schottky junction),当太阳光线照射时,电子沿一定方向流动形成直流电。 …emuch.net|基于18个网页 2. 萧特基接面 电压在闸极附近引起萧特基接面(Schottky junction)阻止电子或电洞流经装置。所以若电子被...
Let the work function of a metal be Φm and that of an n-type semiconductor be Φn. When Φm > Φn, a Schottky junction is formed when the n-type (or p-type) semiconductor is in contact with the metal. The Schottky junction is used to create Schottky ...
design, the silicon “MIS-IL solar cell” (short for metal-insulator-semiconductor inversion-layer), and moreover they continue to be used fairly commonly in a lab setting (due to their simple architecture). In this paper, we will examine the general operating principles of Schottky junction ...
Herein, we innovatively construct a rolling-mode Cu/ternary cation perovskite (FA0.945MA0.025Cs0.03Pb(I0.975Br0.025)3) Schottky junction DC-TENGs with ultrahigh current output and excellent operational stability. The Cu/perovskite Schottky junction ensures the formation of an internal electric field, ...
必应词典为您提供schottkyjunction的释义,网络释义: 肖特基结;萧特基接面;
We employ an atomically thin TiO2 interfacial layer between an n-type Si substrate and a nanometer-thick metallic layer, which is positioned beneath a transparent conductive oxide (TCO) layer, to create n-Si/TiO2/TiN/ITO multilayered Schottky-junction photodiodes. Without the typical p-n ...
SCHOTTKY JUNCTION STRUCTURE 专利名称：SCHOTTKY JUNCTION STRUCTURE 发明人：HIROSE KAZUYUKI 申请号：JP717988 申请日：19880114 公开号：JPH01186672A 公开日：19890726 专利内容由知识产权出版社提供 摘要：PURPOSE:To make it possible to control the height of Schottky barrier by shaping a kind of metal having ...
It can be inferred that Pd-Ag alloy is the most suitable catalytic metal amongst the three for methane sensing using the Pd-Ag/ZnO Schottky junction. Table 2. Response, response time, and recovery time of different noble metal contacts on ZnO thin film (calculated from Figure 6). % of ...