石墨烯和硅当他们结合到一起时,形成肖特基结(Schottky junction),当太阳光线照射时,电子沿一定方向流动形成直流电。 …emuch.net|基于18个网页 2. 萧特基接面 电压在闸极附近引起萧特基接面(Schottky junction)阻止电子或电洞流经装置。所以若电子被阻挡,电洞就能流动,而电晶体 …only-perception.blogspot.com|基...
必应词典为您提供schottkyjunction的释义,网络释义: 肖特基结;萧特基接面;
半导体材料与技术讲义-Schottky junction 3.4Schottkyjunction3.4.1Schottkydiode FormationofaSchottkyjunctionbetweenametalandann-typesemiconductorwhenΦm>Φn.Thereisanelectron-depletedregionofawidthWinwhichthereareexposedpositivelychargeddonors,inotherwords,netpositivelyspacecharge.Thisregionconstitutesaspacechargelayer(...
4) Schottky junction 肖特基结 1. The improvement of its performance was analyzed by substituting the ZnSe p n junction with the Au/i ZnSe/n ZnSe (MIS structure)Schottky junction. 根据测得的ZnSep n结的外量子效率(QE)曲线,研究了ZnSe/GaAs/Ge叠层多结光电池的ZnSe顶电池结构、优缺点及全电池的电...
This process results in an element built of a laminate 1 and W film 2. An excellent Schottky junction formed in this way is high in its resistance to heat and other environmental factors.NAKAHATA HIDEAKIIMAI TAKAHIROSHIOMI HIROSHIFUJIMORI NAOHARU...
Here, we report the implementation of Schottky junction-based photovoltaic devices through site-selective surface doping of few-layer WSe 2 in lateral contact configuration. Specifically, whereas the drain region is covered by a strong molecular p-type dopant (NDP-9) to achieve an Ohmic contact, ...
Let the work function of a metal be Φm and that of an n-type semiconductor be Φn. When Φm > Φn, a Schottky junction is formed when the n-type (or p-type) semiconductor is in contact with the metal. The Schottky junction is used to create Schottky bar
Monolayer Graphene/Germanium Schottky Junction infrared (IR) light sensing High-Performance Self-Driven Infrared Light Photodetector monolayer graphene (MLG)/germanium (Ge) heterojunction Schottky junction optoelectronic device 引用走势 2015 被引量:33 站内活动 ...
2599Accesses Abstract The paper describes the combination of conductive, semi-transparent graphene films with a n-type silicon wafers to make solar cells with power conversion efficiencies up to 1.5% at AM 1.5G. The Schottky junction solar cells reported here can be extended to other semiconducting...
互联网 As an example,Schottkybarrier diode characteristics is simulated using this method. 以肖特基势垒二极管为例, 应用该方法,实现了高接触势垒情形下的正反向电流模拟. 互联网 This abnormal behavioral of heterogeneity - junction can be explained bySchottkypotential asymmetrical. ...