半导体材料与技术讲义-Schottky junction 3.4Schottkyjunction3.4.1Schottkydiode FormationofaSchottkyjunctionbetweenametalandann-typesemiconductorwhenΦm>Φn.Thereisanelectron-depletedregionofawidthWinwhichthereareexposedpositivelychargeddonors,inotherwords,netpositivelyspacecharge.Thisregionconstitutesaspacechargelayer(...
This process results in an element built of a laminate 1 and W film 2. An excellent Schottky junction formed in this way is high in its resistance to heat and other environmental factors.NAKAHATA HIDEAKIIMAI TAKAHIROSHIOMI HIROSHIFUJIMORI NAOHARU...
石墨烯和硅当他们结合到一起时,形成肖特基结(Schottky junction),当太阳光线照射时,电子沿一定方向流动形成直流电。 …emuch.net|基于18个网页 2. 萧特基接面 电压在闸极附近引起萧特基接面(Schottky junction)阻止电子或电洞流经装置。所以若电子被阻挡,电洞就能流动,而电晶体 …only-perception.blogspot.com|基...
必应词典为您提供schottkyjunction的释义,网络释义: 肖特基结;萧特基接面;
Schottky–Mott model. Since 2D metals can form the weaker chemical bonding interface with 2D vdWs semiconductors and efficiently suppress the metal-induced gap states in conventional Schottky junctions22,24,25. The metal-induced gap states are one of the important sources of the Fermi pinning ...
as metal) can be treated as metal-semiconductor Schottky junction. In this kind of junction, one...
After this, the layer 14 of other regions is eliminated leaving the upper layer 14 of Schottky junction surface which is surrounded by the film 12, thus forming a surface metal layer 15. After this, the layers 13 and 15 on the oxide film 12 are eliminated, and a diode where the layer...
In this study, we present a broadband nano-photodetector based on single-layer graphene (SLG)-carbon nanotube thin film (CNTF) Schottky junction. It was found that the as-fabricated device exhibited obvious sensitivity to a wide range of illumination, with peak sensitivity at 600 and 920 nm...
The terminology “Schottky barrier” is a potential energy barrier for electrons formed at a metal-semiconductor interface that is often referred to as Schottky junction. From:Sensors and Actuators B: Chemical,2015 Also in subject area: Materials Science ...
3.The Schottky diode of claim 1 wherein:said Schottky barrier metal further lining a bottom surface of said trench forming a Schottky junction on said trench bottom surface. 4.The Schottky diode of claim 1 further comprising:a dialectical layer disposed along sidewalls of said trench. ...