PURPOSE:To improve the surge characteristics, by forming a Schottky junction in a part of a source electrode oposed to a gate feeding point. CONSTITUTION:A Schottky junction 11 is formed in a portion on the periphery of a source electrode 104s adjacent to the feeding center 114g for a ...
Using DNAs integrated within an aluminium (Al)﹊ndium tin oxide (ITO) Schottky junction, both semiconductive and conductive electronic profiles are observed. The study exhibited Ohmic behaviour at high acidic (pH 1 to 2) and basic (pH 13 to 14) environments, while behaving as a semiconductive...
Schottky junction type field effect transistor and method of manufacturing the same This invention has as its object to easily obtain a MESFET free from output distortion. For this purpose, in this invention, an n-type layer (4) is formed at a substrate position spaced apart from a gate ...
In accordance with an aspect of the invention, A Schottky junction field effect transistor (JFET) is created using cobalt silicide, or other Schottky material, to form the gate contact of the JFET. The structural concepts can also be applied to a standard JFET that uses N type or P type ...
field-effect transistor electronic transistor,junction transistor,transistor- a semiconductor device capable of amplification Based on WordNet 3.0, Farlex clipart collection. © 2003-2012 Princeton University, Farlex Inc. Want to thank TFD for its existence?Tell a friend about us, add a link to ...
Figure 1-14 Reverse-biased pn junction 第Ⅱ章:肖特基势垒二极管的基础知识(金属半导体结的基础知识) 2. Metal-semiconductor junction In the previous section, we have discussed the diffusion potential across a pn junction. You now understand that the Fermi level is the reference energy level for the...
Thus, our finding further demonstrates the remarkable contribution of the photothermal effect to the photocatalytic activity. 3.2. Photocatalytic mechanism Based on the above analysis, the ZMM photocatalyst exhibits excellent activity due to the self-integrated effect of the Schottky junction, photothermal ...
a channel region 2c made of an N-type AlGaAs layer of a predetermined pattern and a gate region 4 made of a tungsten silicide layer for forming a Schottky junction on the side face of the region 2c are formed through an insulating layer 3a thereon, an insulating layer 3b is formed on...
NORMALLY-OFF TYPE SCHOTTKY JUNCTION FIELD EFFECT TRANSISTOR PURPOSE:To obtain a property which is made more excellent as compared with a conventional normally OFF type transistor, by a method wherein a thickness of a region, under a gate electrode, of a semiconductor is equalized with that of ...
thus varying the current passing through the gas sensor. The current passing through the Schottky junction is exponentially dependent on the height of the potential barrier and therefore a modulation of the barrier has an amplifying effect on the current variation similar to that of the gate in a...