FET (redirected fromSchottky) Thesaurus Medical Encyclopedia Wikipedia Related to Schottky:Schottky defect,Schottky Effect,Schottky barrier FET abbr. 1.federal estate tax 2.federal excise tax 3.field effect transistor 4.frozen embryo transfer American Heritage® Dictionary of the English Language, Fifth...
补充资料:Mott-Schottky equation 分子式:CAS号:性质:该方程描述半导体的空间电荷层微分电容Csc与半导体表面对于本体的电势△φ的关系:式中ε为相对介电常数,εn为真空介电常数,N是施主(对n型半导体)或受主(对p型半导体)密度;E及Efb分别为电极电势及平带电势,均相对于特定的参比电极。此式在时成立。根据上述方程...
The applications of any two-dimensional (2D) semiconductor devices cannot bypass the control of metal-semiconductor interfaces, which can be severely affected by complex Fermi pinning effects and defect states. Here, we report a near-ideal rectifier in t
Poisson's equationWe present a methodology for modeling semiconducting oxide Schottky junctions. Our methodology accounts for the defect structure of the semiconducting oxide layer. The method is applied to the Pd/ZnO Schottky junction. The ionic defects have important role in shaping the junction ...
For characterizing the electrical properties (e.g., Schottky barrier height, ideality factor, and series resistance) of the fabricated Pt/n-type TiO2 Schottky nanodiode, the measured current-voltage (I–V) curves of the fabricated nanodiodes is fitted to the thermionic emission equation [129]. ...
These defect states are formed on the surface of the GaN nanorod due to Ga or N termination, surface reconstructions, relaxation, dangling bonds or damages introduced during RIE. When electron beam is focussed at the top of the nanorod, CL spectrum is dominated by the NBE luminescence while ...
These defect states are formed on the surface of the GaN nanorod due to Ga or N termination, surface reconstructions, relaxation, dangling bonds or damages introduced during RIE. When electron beam is focussed at the top of the nanorod, CL spectrum is dominated by the NBE luminescence while ...
To explain the observed electrical behaviors, defect-assisted tunneling was necessary to invoke. In Figure 5, the fit of the reverse bias branch of Ir-V/T characteristics from Figure 2 [26] with PhAT model is exposed. As can be seen the theoretical curves describe well the experimental data...
Corresponding p-type Schottky barrier (φp) follows the equation (2)φp=Eg–(φm–χ) where Egrepresents the bandgap of semiconductor. However, due to the existence of pinning effect at 2D/metal interface, the semiconductor/metal contact in practical applications rarely follows the Schottky-...
Huansheng Ning1, Zong-Liang Huo2 & Jin-Yan Wang3 A new physical model of the gate controlled Schottky barrier height (SBH) lowering in top-gated graphene field-effect transistors (GFETs) under saturation bias condition is proposed based on the energy conservation equation with the balance...