Thermal impedanceTBR is isolated by 3ωmethod on different thickness film samples.Temperature dependence of TBR is dominated by near-interface effect.Temperature dependence of TBC is stronger for GaN-sapphire than SiO2-GaN.doi:10.1016/j.ijthermalsci.2014.08.024Zhaoliang Wang...
The higher contact pressure and the lower thermal conductivity of sapphire with respect to steel, could increase the temperature at the interface [48], thus further reducing water content in DPA. The above discussed XPS results are in agreement with a lower water content at the stainless steel ...
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1. GaN has a wide band gap at 3.4eV, and a high thermal conductivity at 1.3W /cm-K, its band gap width at room temperature is 3.39eV. GaN has excellent optical, electrical properties and excellent mechanical properties and thermal stability, it's an ideal material for the short-wavelength...
2. Sapphire has high rigidity, high strength, high working temperature, abrasion resistance, corrosion resistance characteristics, so sapphire substrate is often used in harsh environments, such as boiler water gauge (high-temperature resistance), commodity bar code scanner, bearing, and other precision...
These improvements were possible because LiCAF has a higher thermal conductivity than LiSAF, leading to lower thermal lensing, and also because fluorescence quenching of the ∼800-nm laser transition occurs at a much higher temperature in Cr:LiCAF (255 vs. 69 °C). Although mode-locked Cr:...
Therefore, the annealing temperature of 650 ◦C, being higher than that used in the mist-CVD growth process, was chosen to further modify the electrical properties of the grown films. Notably, the electrical properties of CoO and Co3O4 films can be further improved using a post-thermal ...
Consequently, ZnO thin films with high quality grown on the quartz glass substrates can be achieved by means of magnetron sputtering and high-temperature annealing at 600 ◦C. Keywords: ZnO thin films; quartz glass substrate; sapphire substrate; magnetron sputtering; annealing 1. Introduction ...
This is attributed to the ultra-wide bandgap AlN buffer, which is extremely promising for high power, high temperature future applications. Keywords: GaN; high-electron-mobility transistor (HEMT); ultra-wide band gap 1. Introduction AlGaN/GaN high-electron-mobility transistors (HEMTs) is a ...