2. 射频微机电系统开关 我们从2000年就开始跟踪射频微机电系统开关(RF MEMS Switches)并且刚刚更新了我们的技术及市场分析。尽管去年的市 …www.2ic.cn|基于4个网页 例句 释义: 全部,射频微机电开关,射频微机电系统开关 更多例句筛选 1. Residual stresses produced by micro-machined process have key influence ...
RF_MEMS_Switches
E. R. Brown, "RF-MEMS switches for reconfigurable integrated circuits," IEEE Trans. MTT, vol. 46, no. 11, pp. 1868-1880, 1998.Brown E R.RF-MEMS switches for reconfigurable integrated circuits. IEEE Transactions on Microwave Theory and Techniques . 1998...
[5] PETERSEN K E.Micromechanical membrane switches on silicon[J].Ibm Journal of Research & Development,1979,23(23):376-385. [6] LARSON L E,HACKETT R H,MELENDES M A,et al.Micromachined microwave actuator(MIMAC) technology-a new tuning approach for microwave integrated circuits[C].IEEE Micr...
RF switches based on microelectromechanical systems (MEMS) technology have emerged as a viable, easy-to-use solution to address the space, switching speed, front-end filtering, and flexibility issues facing designers of advanced wireless systems. This article begins with a look ...
Such applications always require some kind of switches. The RF MEMS switch technology presented in this paper has been combined with a standard commercial GaAs MMIC process from the OMMIC foundry. Several switches have been designed and evaluated within the FP7 project MEMS-4-MMIC. Such switches ...
This paper reports on the reliability of RF MEMS switches operating in a cryogenic (<6 K) environment while monitoring the repeatability of their contact resistance (Rc) over time. Series DC-contact switches were actuated with a bipolar waveform then checked for stiction every 100 thousand contacts...
1. Study of actuation voltage of broadband RF-MEMS switches; 宽带RF-MEMS开关驱动电压的分析研究2) RF MEMS Switches RF MEMS开关 1. RF MEMS Switches Resonant Frequency Offset by Residual Stresses; 残余应力对RF MEMS开关谐振频率偏移的影响 2. The reliability and failure mechanisms of RF MEMS ...
与传统的半导体开关器件相比,RF MEMS 开关具有优良的高频特性(插入损耗低、隔离度大、线性度好)和固有的重量轻、尺寸小、低功耗等优点。 Compared with conventional swit- ches,RF MEMS switches not only have superior hi...
The sensitivity to ESD events of electrostatically driven ohmic RF-MEMS switches under actuated and not-actuated conditions is here investigated. We have found that stiction and charge-trapping phenomena can be induced by EOS/ESD events. Preliminary results on HBM robustness with a good correlation ...