Freescale Semiconductor Technical Data RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET Designed for Class A or Class AB base station applications with frequencies up to 2000 MHz. Suitable for analog and digital modulation and multicarrier amplifier applications. • ...
MRF9511 power transistor tube Rf field effect triode transistor High frequency low noise broadband NPN transistor 更新时间:2024年04月24日 价格 ￥30.00 ￥20.00 ￥18.00 起订量 100个起批 500个起批 1000个起批 货源所属商家已经过真实性核验 发货地 四川省 成都市 数量 获取底价 查看电话 商家...
MRF957 power transistor tube Rf field effect triode transistor High frequency low noise broadband NPN transistor 更新时间:2024年04月23日 价格 ￥30.00 ￥20.00 ￥18.00 起订量 100个起批 500个起批 1000个起批 货源所属商家已经过真实性核验 发货地 四川省 成都市 数量 获取底价 查看电话 商家...
RF Power Transistor MRF646 Type 1 E-stop relay MRF646 Type 7 position switch MRF646 Type 2 Magnetic safety switch MRF646 Type 3 Safety switch MRF646 type 9 linear transducer condition original and new MRF646 Packaging and delivery Packaging Details MRF646 RF Power Field Effect Transistor mosfet...
飞思卡尔FREESCALE SEMICONDUCTOR - MRF1511NT1 RF Power Field Effect Transistor N- Channel Enhancement- Mode Lateral MOSFET handbook说明书用户手册.PDF,Freescale Semiconductor Document Number: MRF1511N Technical Data Rev. 6, 9/2006 RF Power Field Effect Tra
Systems, methods, and apparatus are provided for tuning in wireless power transfer circuits. One aspect of the disclosure provides an apparatus for tuning. The apparatus includes a field effect transistor having a gate, source, and drain, where the field effect transistor is configured to ...
Design of power efficient power amplifier for B3G base stations Enhancement-Mode Lateral MOSFET Transistor, MRF7S38010HR3; The performances of the Doherty amplifier are compared with that of the conventional Class AB ... AS Hussaini,BAL Gwandu,R Abd-Alhameed,... - IEEE...
MySTに保存する RF Power LDMOS transistor HF up to 1.5 GHz 製品概要 概要 The ST9060C is a 28/32 V common source N-channel enhancement-mode lateral field-effect RF power transistor designed for broadband commercial, avionics and industrial applications at frequencies up to 1.5 GHz. The device ...
UF28100V RF Power MOSFET Transistor 微波功率管 GaAs GaN 内匹配管 预匹配管 功放 雷达 卫星 导航 航天 M/A-COM CREE ADI Hittite Qor价格 ¥ 400.00 ¥ 300.00 起订数 100个起批 500个起批 发货地 四川成都 咨询底价 产品服务 热门商品 MADZ-011003 THz Diodes 太赫兹二极管 PIN二极管 MACOM ...
• Broadband communications • Industrial, scientific and medical (ISM) • Avionics Description The ST50V10200 is a common-source N-channel enhancement-mode lateral field- effect RF power transistor designed for broadband commercial, avionics and industrial applications at frequencies up to 1.5 ...