A radio frequency (RF) power transistor circuit includes a power transistor and a decoupling circuit. The power transistor has a control electrode coupled to an input terminal for receiving an RF input signal, a first current electrode for providing an RF output signal at an output terminal, ...
RF Power Field Effect Transistor N-Channel 增强模式 La MW6S004NT1
Highly Efficient and Multi-Functional RF Power Transistors We offer high-performance GaN-on-SiC, High-Electron Mobility Transistor (HEMT)-based discrete CW and pulsed RF and microwave transistor products up to 14 GHz for use in aerospace and defense, commercial radar, interconnected communications, ...
SD2931-10 RF power transistor: HF/VHF/UHF N-channel power MOSFETs Datasheet - production data • POUT = 150 W min. with 14 dB gain @ 175 MHz • Thermally enhanced packaging for lower junction temperatures M174 Epoxy sealed Figure 1. Pin connection 41 Description The SD2931-10 is a ...
A RF power amplifier circuit has at least one power transistor and a protection circuit protecting the power transistor against high voltages that lead to a destructive breakdown of the transistor. The circuit comprises a power transistor ( 2 ), a biasing circuit ( 6 ) biasing the power transis...
专利名称:RF POWER AMPLIFIER CIRCUIT 发明人:PRIKHODKO, Dmitry, P.,VAN ZUIJLEN, Albertus, G., W., P.,KRAMER, Niels 申请号:IB 2002004 058 申请日:20021002 公开号:WO03/034 586P 1 公开日:200304 24 摘要:A RF power amplifier circuit has at least one power transistor and a protection circuit...
RF POWER LDMOS TRANSISTOR 2450 Application Electronic Product Series RF FET,MOSFET Features standard Manufacturing Date Code standard MOQ 1pcs Warranty 90Days More details Pleases Contact Type IC Intergrated Circuit Shipping by DHL\UPS\Fedex\EMS\Sea\Train Payment Paypal\TT\ Trade Assurance ROHS yes Pa...
US Patent References: 3058036 Semiconductor circuit interrupter 1962-10-09 2925548 Protective device for transistor regulators 1960-02-16 2925535 Protective device 1960-02-16 2904742 Current supply apparatus 1959-09-15 Home Search Services Communities Help Contact us Advertise on this Site ...
Power Gain versus Output Power and Drain Voltage RF Device Data NXP Semiconductors AFT31150N 11 3100 MHz NARROWBAND PRODUCTION TEST FIXTURE f MHz Zsource Ω Zload Ω 3100 9.5 – j5.3 5.5 + j1.2 Zsource = Test circuit impedance as measured from gate to ground. Zload = Test circuit ...
Turn RF power off 2. Reduce VGS down to –5 V 3. Reduce VDS down to 0 V (Adequate time must be allowed for VDS to reduce to 0 V to prevent severe damage to device.) 4. Turn off VGS RF Device Data NXP Semiconductors MMRF5014H 3 500–2500 MHz WIDEBAND REFERENCE CIRCUIT — 2.0...