A radio frequency (RF) power transistor circuit includes a power transistor and a decoupling circuit. The power transistor has a control electrode coupled to an input terminal for receiving an RF input signal, a first current electrode for providing an RF output signal at an output terminal, ...
Communications Internally matched CW and pulsed power transistor products for communication applications up to 14 GHz. Learn More About Communication Applications Industrial Discrete CW, pulsed die, and packaged power transistors for industrial applications up to 14 GHz. ...
SD2931-10 RF power transistor: HF/VHF/UHF N-channel power MOSFETs Datasheet - production data • POUT = 150 W min. with 14 dB gain @ 175 MHz • Thermally enhanced packaging for lower junction temperatures M174 Epoxy sealed Figure 1. Pin connection 41 Description The SD2931-10 is a ...
A RF power amplifier circuit has at least one power transistor and a protection circuit protecting the power transistor against high voltages that lead to a destructive breakdown of the transistor. The circuit comprises a power transistor ( 2 ), a biasing circuit ( 6 ) biasing the power transis...
This paper demonstrates the design and simulation of input matching circuit for BLF578XR power transistor working at center frequency of 225 MHZ with bandwidth of more than 50 MHZ. Based on the calculated Q-factor and when using the transistor in push pull mode, the input matching circuit is ...
US Patent References: 3058036 Semiconductor circuit interrupter 1962-10-09 2925548 Protective device for transistor regulators 1960-02-16 2925535 Protective device 1960-02-16 2904742 Current supply apparatus 1959-09-15 Home Search Services Communities Help Contact us Advertise on this Site ...
1030, 1090 MHz Performance (In Freescale Reference Circuit, 50 ohm system) VDD = 50 Vdc, IDQ(A+B) = 100 mA Frequency (MHz) Signal Type Gps (dB) 1030 1090 Pulse (128 sec, 10% Duty Cycle) 18.9 18.8 D (%) 56.0 57.9 Pout (W) 1300 Peak 1100 Peak RF Device Data Freescale...
Power Gain and Drain Efficiency versus CW Output Power RF Device Data NXP Semiconductors MRFE6VS25L 13 TYPICAL CHARACTERISTICS — 1.8--30 MHz HF BROADBAND REFERENCE CIRCUIT — TWO--TONE (1) --20 --25 VDD = 50 Vdc, IDQ = 100 mA --30 f1 = 1.795 MHz, f2 = 1.805 MHz Two--Tone ...
The present invention concerns a circuit by the aid of which the power (Pin) emitted from the RF power sensor (SK) of a radio telephone is processed to become a detector voltage which is proportional to said power. The circuit comprises a transistor (Q2) acting as an active rectifier, whi...
IGBT Module, RF Power Transistor, Ipm Module, Single/Three Phase Bridge, High Voltage Capacitor, High Power Mosfet, Epcos Surge Arrester, Resistor Transistor, Aluminum Electrolytic Capacitor, PTC Fuse Company Introduction Production Capacity Shenzhen Vole Technology Co., Ltd. Is a gather the developmen...