1.2 kV-Class SiC MOSFET Equipped with Embedded SBD for Improvement of Reliability Toshiba Review SiC MOSFETs are a key type of power device for power supply units because of the superior performance of SiC materials. However, improvement of the reliability of SiC MOSFETs is hindered by issues ass...
SiC MOSFETs are attracting attention as a new generation of power devices due to their superior characteristics. SBD-embedded MOSFETs have also been expanding into the mainstream. The Toshiba Group has developed a novel design method for SBD-embedded SiC MOSFETs that makes it possible to simulate ...
1.2 kV-Class SiC MOSFET Equipped with Embedded SBD for Improvement of Reliability Toshiba Review SiC MOSFETs are a key type of power device for power supply units because of the superior performance of SiC materials. However, improvement of the reliability of SiC MOSFETs is hindered by issues ...
class D audio amplifiers; GaN device; power efficiency; THD; modulation method1. Introduction The power amplifier is a type of electronic amplifier designed to increase the magnitude of the power of a given input signal. The audio power amplifier circuit is an essential branch of the power ...
Its excellent performance characteristics, like its wide band gap, high electron mobility, high breakdown field, low noise, high saturation velocity, and low thermal impedance, are essential for modern power device technology [3]. This review article will provide a basic overview of the various ...
SiC MOSFETs are attracting attention as a new generation of power devices due to their superior characteristics. SBD-embedded MOSFETs have also been expanding into the mainstream. The Toshiba Group has developed a novel design method for SBD-embedded SiC MOSFETs that makes it possible to simulate ...