Hefner , “Reliability of SiC MOS devices” , Solid-State Electronics , 2004 ,page(s):1717–1720 :Ranbir Singh and Allen R. Hefner.Reliability of SiC MOS devices. Solid State Electronics . 2004Ranbir Singh and Allen R. Hefner.Reliability of SiC MOS devices. Solid State Electronics . 2004...
Effect of High Temperature Oxidation on the Gate Oxide Reliability of SiC MOS Devices The performance of SiC metal oxide semiconductor( MOS) devices is directly affected by the reliability of the SiO_2 gate oxide layer.In order to develop th... Q Zhou,Z Jing,J Xia,... - 《Semiconductor ...
A recent TDDB study showed that the gate oxides in 4H-SiC MOSFETs have good reliability, with a 100-year lifetime at 375oC if Eox is limited to 3.9 MV/cm. Future work on MOS reliability should be focused on Vth shifts, instead of catastrophic failures of gate oxides. 展开 ...
The use of current gain as an indicator for the formation of hot spots due to current crowding in power transistors :F. F. OettingerandS. Rubin. 10th IEEE Annual Proceedings, Reliability Physics1972, p. 12 Page 17 select article Reliability test of MOS-LSI-memory for the improvement of the...
Reliability of Diode-Integrated SiC Power MOSFET(DioMOS) Status of the reliability study on silicon carbide (SiC) power MOS transistors is presented. The SiC transistors studied are diode-integrated MOSFETs (DioM... O Kusumoto,A Ohoka,N Horikawa,... - 《Microelectronics Reliability》 被引量: ...
The electrostatic reliability characteristics of gallium nitride flip-chip (FC) power light-emitting diodes (PLEDs) with metal-oxide-silicon (MOS) submount... LB Chang - 《IEEE Transactions on Electron Devices》 被引量: 11发表: 2010年 Effect of direct current sputtering power on the behavior ...
reduced. FN injection data is presented for p type 4H-SiC MOS capacitor under inversion at room temperature and at 325°C. It is concluded that the insulator reliability, and not the SiC, is the limiting factor and therefore the high temperature operation of these devices may not be ...
机译 反复非钳位电感开关试验对直流断路器SiC功率器件的降解特性 作者:Sagara Mitsuhiko;Wada Keiji;Nishizawa Shin-ichi; 刊名:Microelectronics & Reliability 2019年第9期 摘要:This paper investigates the degradation of SiC power devices for DC circuit breaker through repetitive un-clamped indu...
Monitoring of parameter stability of SiC MOSFETs in real application tests M. Sievers, B. Findenig, M. Glavanovics, T. Aichinger, B. Deutschmann Article 113731 select article Extraction of wearout model parameters using on-line test of an SRAM ...
Gate oxide reliability in 4H-SiC MOS devices In: Reliability physics symposium proceedings, 2006. 44th annual, IEEE international; 2006. p. 595.S. Polonsky et al., "Photon emission microscopy of ... S Krishnaswami,M Das,B Hull,... - IEEE International Reliability Physics Symposium 被引量...