All regions of operation of transistors are considered. We show that the low-frequency noise behaviour of small area MOSFETs is very different from that of large area devices and that the spectrum is the summation of Lorentzian spectra generated by the switching of individual active traps.doi:...
In addition, an LDD electrode is disposed opposite the drain extension region so that during on-state operation of the TFT, a relatively high first conductivity type charge carrier concentration can be established in the drain extension region, upon application of a potential bias thereto. A ...
2. A display device having an active matrix circuit and a peripheral driving circuit of an insulating surface, said device comprising: at least first, second and third semiconductor island on said insulating surface; at least a first thin film transistor formed in said active matrix circuit, ...
The maximum voltage produced in fed-batch operation was 0.65V (1,... Y Ahn,BE Logan - 《Applied Microbiology & Biotechnology》 被引量: 87发表: 2012年 Investigation of dynamics of Kerr liquids by time-resolved pump-probe system based on 4f nonlinear imaging technique with phase object A ...
Current mobility of thin film transistors constituting a circuit region SX requiring high-speed operation of these pixel-driving circuits is improved by optimizing a combination of plural layouts, arrangements and configurations for the respective circuits to meet the specifications special for the ...
A single transistor memory cell having insulation regions between a source/drain region and a bulk region and a manufacturing method thereof are provided to improve the data retention property of the memory cell by decreasing a junction area in the source/drain region. A single transistor memory ...
SEMICONDUCTOR MEMORY DEVICE AND METHOD OF PERFORMING BURN-IN TEST ON THE SAME A semiconductor memory device includes a cell array having a plurality of memory cells, each memory cell including a resistive element and a cell transistor between a bit line and a source line, and a source line vo...
摘要: A power supply unit (240) has power level detector (246) arranged between the power supply pads (242,244) respectively provided at upper and lower regions of power supply unit. The power level detector is electrically connected to the power supply pads....
the impact ionization in the junction is mitigated and the device can allow higher on-state current before snap back, which limits the device operation, happens. For this reason, the safe operating area (SOA) of the LDMOS device in the embodiments described is higher compared to that of the...
“pinch” rectifier, based on the operation of the P-N junction grid. The P-N junction grid is designed so that the depletion layers extending from the grid into the substrate will not pinch-off the channel regions to forward-biased currents, but will pinch-off the channel regions to ...