Method for making source and drain regions of a MOSFET with embedded germanium-containing layers having different germanium concentrationAn integrated circuit structure includes a gate stack over a semiconductor substrate, and an opening extending into the semiconductor substrate, wherein the opening is ...
turn-on in an N-type enhancement MOSFET occurs when a conductive N-type inversion layer is formed in the P-type base region (also referred to as “channel region”) in response to the application of a positive gate bias. The inversion layer electrically connects the N-type source and drain...
Structure and method for replacement gate MOSFET with self-aligned contact using sacrificial mandrel dielectric The present disclosure provides a method for forming a semiconductor device that includes forming a replacement gate structure overlying a channel region of a substrate. A mandrel dielectric layer...
A MOSFET structure in a silicon body (10), such as platinum silicide, which fills a recess in an oxide layer located on a sidewall (14) of the gate electrode. The cavity is obtained by the isotropic etching an exposed region of the surface of the silicon body to the source regions and...
Moreover, the model allows for good physical insight in device performance properties, such as extraction of the VSV, which is a parameter of critical technological importance that allows for continued MOSFET performance scaling. The simplicity of the model and the fact that it only uses ...
A method for removing damages of a dual damascene structure after plasma etching is disclosed. The method comprises the use of sublimation processes to deposit reactive material onto the damaged regions and conditions to achieve a controlled removal of the damaged region. Furthermore a semiconductor ...
The diode emitter area was protected by 0.6 μm thick CVD oxide during the processing of the MOSFET gate oxide. Three gate oxide processes were taken into account: two of them include a N implantation before a wet oxidation, while the third one was a standard oxidation. Conside...
A method for establishing conditions of making an index representing characteristics of a MOSFET in a permitted range by means of differentially injecting ions into a wafer. The method includes the steps of: making a curve indicating an amount of energy contamination with respect to a junction dept...
Disclosed is a MOSFET with double source and drain regions. Each of the source and drain regions in the MOSFET is implemented by two impurity-implanted regions. The source region has an n+ type region and a p type region which is formed beneath the n+ type region. The drain region has ...
A metal oxide semiconductor field effect transistor (MOSFET) includes a body pattern of a first conductivity type disposed on an insulating layer. A gate electrode is disposed on the body pattern. A drain region of a second conductivity type is disposed on the insulating layer and having a side...