实际器件中,电子迁移率μn受界面态散射和纵向电场影响,显著低于体迁移率,需通过曲线拟合确定有效值。 2. 饱和区(Saturation Region) 当VDS≥VGS−VT时,沟道在漏端夹断,电流趋于饱和。此时漏极电流ID几乎不再随VDS增加而变化,而是由 VGS控制,表达式为: 式中,省略了*(1+λVDS),λ为沟道长度调制系数,表征...
可以看到,从左到右为NPN的掺杂,在扩散作用下,会自然形成像图中所示的深红色的耗尽区(depletion region),根据前面所述,耗尽区是不能导电的,因此漏极(Drain)到源极(Source)在未加外加电场的时是断开的,因此该结构是Normal off的结构。 注意到,图中正中心区域就是之前讲的核心部分,从上往下,橘黄色,黄色,浅红色...
以平面耗尽型N沟道MOSFET为例,基本结构如下图所示。可以看到,从左到右为NPN的掺杂,在扩散作用下,会自然形成像图中所示的深红色的耗尽区(depletion region),根据前面所述,耗尽区是不能导电的,因此漏极(Drain)到源极(Source)在未加外加电场的时是断开的,因此该结构是N
1)RSOURCE:Source扩散区的电阻(Sourcediffusionresistance); 2)RCH:沟道电阻(Channelresistance),这个电阻是低压器件的RDS(on)组成中最主要的部分(见图5.10); 3)RA:堆积电阻(Accumulationresistance); 4)RJ:两个P-body区域间的JEFT电阻(JEFTcomponent-resistance); 5)RD:漂移区电阻(Driftregionresistance),也就是我...
SOLUTION: This MOSFET is constituted of a first conductive type substrate 3, second conductive type semiconductor regions 1, 2 which are provided along the main surface of one side of the substrate 3, a first conductive type source region 14 provided along the main surface of one side of the...
在C、E两极之间的P型区(包括P+和P-区)(沟道在该区域形成),称为亚沟道区(Subchannel region)。而在漏区另一侧的P+区称为漏注入区(Drain injector),它是IGBT特有的功能区,与漏区和亚沟道区一起形成PNP双极晶体管,起发射极的作用,向漏极注入空穴,进行导电调制,以降低器件的通态电压。附于漏注入区上的电极...
In the off region (–VGS < –Vth) the drain-source current is: IDS=0 In the linear region (0 < –VDS < –VGS +Vth) the drain-source current is: IDS=−K((VGS−Vth)VDS−VDS2/2)(1+λ∣VDS∣) In the saturated region (0 < –VGS +Vth < –VDS) the drain-source current...
In the off region (VGS < Vth), the drain-source current is: IDS=0 In the linear region (0 < VDS < VGS –Vth), the drain-source current is: IDS=K((VGS−Vth)VDS−VDS2/2)(1+λ∣VDS∣) In the saturated region (0 < VGS –Vth < VDS), the drain-source current is: IDS=...
In FIG. 1, the channel 22 is defined as the area between the source 18, drain 20, bottom gate 14, and gate dielectric insulator 28. The channel 22 may therefore be an undoped region of the dielectric layer 16. As can be appreciated, the present invention is applicable to either ...
超结MOSFET(Super Junction MOSFET,SJ-MOS)是一种通过电荷补偿技术突破传统硅基功率器件“硅极限”的高压功率器件。其核心设计在于漂移区(Drift Region)的特殊结构,通过交替排列的P型和N型半导体柱实现电场优化,从而实现低导通电阻(Rds(on))与高击穿电压(BV)的平衡。