The spectra indicate three main peaks at 444 cm 1, 454 cm 1 and 502 cm 1 which may correspond to an atomic arrangement of tetrahedra of the type Si Si yO 4y where y ≠ 0 and y ≠ 1. The results contradict the mixture model (Si+SiO 2) and show that the SiO oxide cannot be ...
ChemInform Abstract: RAMAN SPECTRA OF SILICON TETRAFLUORIDE AND GERMANIUM TETRAFLUORIDE CRYSTALSIR and Raman spectra (solids and liquids)Nois available for this article.doi:10.1002/chin.197808012E. R. BERNSTEING. R. MEREDITHJohn Wiley & Sons, LtdCheminform...
Raman Spectrum of silicon nanowires We measure the effects of phonon confinement on the Raman spectra of silicon nanowires (SiNWs). We show how previous reports of phonon confinement in SiNWs... S Piscanec,AC Ferrari,M Cantoro,... - 《Materials Science & Engineering C Biomimetic & Supramolec...
温度升高硅样品多孔计算激发光源Raman spectra of porous silicon are obtained using 457.5nm laser line, from which some relations between peak parameters and laser powers are obtained. Our previous theoretical research demonstrated that the increase of laser power leads to the increase of local ...
- 《Journal of Raman Spectroscopy》 被引量: 97发表: 2010年 Measuring the structure of etched silicon surfaces with Raman spectroscopy We have measured the unenhanced, nonresonant surface Raman spectra of one monolayer of hydrogen bound to flat and stepped Si(111) surfaces prepared using a... ...
a silicon substrate that were placed under strain bymanipulating the nanotubes with an AFM tip (pushing the central part of the nanotube across the substrate) and studying the Raman spectra before and after manipulation. They observed a very clear downshift in the position of the G band which ...
Raman and infrared spectraAb initio calculationsEthylmethylsilyl difluorideThe infrared (3100–40 cm−1) spectra of gaseous and solid and Raman (3100–20 cm−1) spectrum of liquid ethylmethylsilyl difluoride, CH3CH2SiF2CH3, have been recorded. Both the trans and gauche conformers have been ...
ramanamorphousspectrarelationsiliconbeeman arXiv:cond-mat/0005255v116May2000RelationbetweenRamanspectraandStructureofAmorphousSiliconR.L.C.VinkInstituutFysischeInformatica,UtrechtUniversity,Princetonplein5,3584CCUtrecht,theNetherlands(a)G.T.BarkemaTheoreticalPhysics,UtrechtUniversity,Princetonplein5,3584CCUtrecht,the...
10、400-200-0-520:Silicon Raman Peaktensile compressive-10001002003004005006007008009001000 1100Raman Shift (cm1)-100高稳定性、高重复性硅器件应力测量Width/cm-1 (HWHM)2.802.702.602.500 10 20 30 40 50pm1 s exposure per spectrum(51x5 仁2601 spectra)Positi on /cnr1n-523.5I10 20 30 40 50 pm522...
www.nature.com/npjcompumats ARTICLE OPEN Raman spectra of fine-grained materials from first principles Maxim N. Popov 1 ✉, Jürgen Spitaler1, Vignaswaran K. Veerapandiyan1, Eric Bousquet 2, Jiri Hlinka 3 and Marco Deluca 1 ✉ Raman spectroscopy is an advantageous method for studying the...