One embodiment of the present invention provides a sputtering system for large-scale fabrication of solar cells. The sputtering system includes a reaction chamber, a rotary target situated inside the reaction chamber which is capable of rotating about a longitudinal axis, and an RF power source ...
doi:10.1007/978-0-387-48998-8_1332Thin-film deposition technique which uses a radio frequency (e.g. [equation][equation]) to create a plasma consisting of ions of a process gas (Ar in the case of this investigation). These ions...Dongqing Li ProfSpringer US...
instead. Sputtering can produce thin, less than 3μm(120μin), hard thin-film coatings, e.g., titanium nitride (TiN) which is harder than the hardest metal. Sputtering is now widely applied on cutting tools, injection molding to 当基体是精读导电性的,即,聚合物时,飞溅改为使用射频(RF)。
Boron carbon nitride ( BCN ) thin films were deposited by radio frequency ( RF ) magnetron sputtering . 采用射频 磁控溅射 技术制备出硼碳氮 ( BCN ) 薄膜. 来自互联网 11. They're put in place to reduce radio frequency interference. 他们提出在地方,以减少无线电频率干扰. 来自互联网 12. Radio...
它利用射频(radio frequency RF)技术,取代旧时的双绞线构成局 域网络,提供传统有线局域网的所有功能。网络所需的基础 … wenku.baidu.com|基于431个网页 2. 无线电频率 请教有关信通... ... 射发 Transmit TX 射频,无线电频率Radio Frequency RF射频处理部分 Radio frequency Processing Unit R… ...
The RF sputtered films have better stoichiometry but with low deposit rate. The DC sputtering is often used for mass production of oxide films. The O content in a-IGZO influences the electrical and photosensitive characteristics and the reliability of a-IGZO TFTs [5]. It is known that the ...
Zinc oxide (ZnO) thin films were grown on n-GaN/sapphire substrates by radio-frequency (RF) magnetron sputtering. The films were grown at substrate temperatures ranging from 400 to 700 ℃ for 1 h at a RF power of 80 W in pure Ar gas ambient. The effect of the substrate temperature on...
β-Ga2O3 nanowires (NWs) were grown on amorphous SiN/Si(0 0 1), SiOx/Si(0 0 1), and glass substrates using RF powder sputtering. With increasing deposited film thickness, the films changed from amorphous non-stoichiometric Ga2O3−x thin films to β-Ga2O3 NWs. The phase separation ...
Polycrystalline aluminum nitride (AlN) films were deposited on Si (111) substrates by radio frequency (RF) magnetron sputtering method in an nitrogen (N2) + argon (Ar) gas mixture. The effect of the preparation conditions- sputtering pressure (p), sputtering power (w), gas mixture (Ar/N2)...
Competing phases in epitaxial SnO<inf>2</inf> thin films deposited on sapphire(0001) substrates using radio-frequency powder sputtering 2022, Ceramics International Citation Excerpt : SnO2 thin films were deposited using radio-frequency (RF) powder sputtering. The detailed sputtering process, including...