A new ultra-low-voltage (LV) low-power (LP) bulk-driven quasi-floating-gate (BD-QFG) operational transconductance amplifier (OTA) is presented in this paper. The proposed circuit is designed using 0.18?μm CMOS technology. A supply voltage of ±0.3?V a
Low voltageLow powerBulk-driven quasi-floating gateCurrent mirrorFVFCurrent comparatorThis paper introduces a new low-voltage, low-power FVF current mirror circuit. The bulk-driven (BD) technique is employed to achieve extended input voltage swing and low supply voltage. Besides, the quasi-floating...
This paper demonstrates the use of quasi-floating gate MOSFET (QFGMOS) in the design of a low voltage current mirror and highlights its advantages over the floating gate MOSFET (FGMOS). The use of resistive compensation has been shown to enhance the bandwidth of QFGMOS current mirror. The pro...
Quasi Floating Gate TransistorRefresh CircuitSince in designing the full adder circuits, full addershave been generally taken into account, so as in this paper it has beenattempted to represent a full adder cell with a significant efficiency ofpower, speed and leakage current levels. For this ...
To reduce the power dissipation, it has been offered to use a floating gate MOSFET technology. According to decline the size of the circuits and power dissipation, thickness of the gate oxide will decrease and this causes a big leakage current in the VLSI circuits. So, new methods should be...
As conventional circuits based on field-effect transistors are approaching their physical limits due to quantum phenomena, semi-floating gate transistors have emerged as an alternative ultrafast and silicon-compatible technology. Here, we show a quasi-non-volatile memory featuring a semi-floating gate ...
2) floating gate 浮栅 1. The extraction methods of gate coupling coefficient of floating gate device mainly aim at no-nignored channel coupling. 提取浮栅器件栅耦合率的方法一般都是针对不可忽略的沟道耦合现象进行修正。 2. Based on the research on the changes of threshold voltage of FLOTOX ...
able to process the AC signal as its usual at quasi-floating gate transistors but also the DC which extends the applicability of the proposed circuit. ... F Khateb,N Khatib,D Kubánek - 《Radioengineering》 被引量: 25发表: 2012年 Quasi Resonant DC Link Inverter with a Simple Auxiliary Circ...
a layer of gate dielectric material selectively patterned over the EPI layer; a layer of gate electrode material selectively patterned over the layer gate dielectric material; and wherein the gate electrode material and the gate dielectric material form a gate of the device and upon a bias being...
The design utilizes the gate-driven quasi-floating bulk (GDQFB) technique on a recycling folded cascode structure, which enhances the transconductance of OTA and improves its performance. All the post-layout simulation results have been obtained in 0.18-μm CMOS N-well technology using BSIM3V3 ...